BZT52C3V3-HE3-18 Allicdata Electronics
Allicdata Part #:

BZT52C3V3-HE3-18GITR-ND

Manufacturer Part#:

BZT52C3V3-HE3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3.3V 410MW SOD123
More Detail: Zener Diode 3.3V 410mW ±5% Surface Mount SOD-123
DataSheet: BZT52C3V3-HE3-18 datasheetBZT52C3V3-HE3-18 Datasheet/PDF
Quantity: 10000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 10000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 410mW
Impedance (Max) (Zzt): 80 Ohms
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZT52C3V3-HE3-18 is a zener diode designed to regulate voltage at required levels. It is designed to work as an anti-overvoltage diode, as it protects circuits from excessively high voltage levels when they are used in an alternating current setup. The diode is powered by a 9 to 12 volt DC output, and when the current exceeds preset thresholds, the diode rapidly reduces the voltage and maintains it at the predetermined level.

The BZT52C3V3-HE3-18 is designed to be used in a broad range of applications, including power supplies, audio amplifiers, automotive electronics, consumer electronics, and so on. It is particularly effective in controlling the power supply of microprocessors and other sensitive electronic components.

The BZT52C3V3-HE3-18 is a high-performance device that offers extended temperature range and ultra-low temperature co-efficient. It also features excellent surge current capability, good breakdown voltage stability, and fast transient time. Furthermore, it offers excellent mechanical strength and corrosion resistance for reliable performance.

The functioning of the BZT52C3V3-HE3-18 Zener Diode relies on two physical processes. First, it exploits the PN junction between the two dissimilar semiconductor junctions. When the voltage applied to the diode exceeds the breakdown voltage, the electric potential of the PN junction increases, thereby allowing a current flow to occur.

Second, the Zener effect is employed to adjust the bias voltage within the diode and maintain it at a constant, predetermined level. The diode uses reverse breakdown to regulate and control the voltage at a fixed level, preventing electrical components from being damaged due to excessive voltages.

The BZT52C3V3-HE3-18 diode is made from silicon, which is renowned for its high thermal conductivity and excellent reliability. The device also features low self-heating and fast switching time to ensure uninterrupted operation. The device is also tolerant to contactless electrostatic discharge and features a peak reverse current.

In conclusion, the BZT52C3V3-HE3-18 Zener Diode is a reliable, high-performance device designed to regulate voltages in a range of applications. It utilises both PN junction and the Zener effect to maintain the bias voltage at a predetermined level, while also featuring excellent thermal and electrical properties.

The specific data is subject to PDF, and the above content is for reference

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