
Allicdata Part #: | BZT52C3V3S-TP-ND |
Manufacturer Part#: |
BZT52C3V3S-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 3.3V 200MW SOD323 |
More Detail: | Zener Diode 3.3V 200mW ±6% Surface Mount SOD-323 |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.03043 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±6% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 95 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | BZT52C3V3 |
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Diodes are widely used in many electrical applications. Among them, the BZT52C3V3S-TP is one of the most popular. A BZT52C3V3S-TP diode is a Zener diode, a single diode that can be used in a variety of electrical devices.
When configured as anti-parallel, these diodes can be used to create an avalanche breakdown effect, which is the basis for Zener diodes. In this breakdown effect, a large amount of reverse current can flow when the breakdown voltage (the voltage at which the current begins to exceed the built-in threshold of the diode) is reached. This lets the current bypass the normal forward-biased which normally restricts current from flowing. In this breakdown effect, electrons gain enough energy and start to jump across the ‘energy barrier’, and the electron cells start to conduct a current no matter what voltage is applied to the diode.
The BZT52C3V3S-TP diode has a wide range of applications, primarily in consumer electronics. As they are able to regulate voltage within a circuit and provide protection against short circuits and electrostatic discharges, they are ideal for use in circuits with sensitive data that requires accurate and consistent voltage regulation. They can also be used to create constant voltage sources, as they are able to provide a steady voltage that can be used to power other components.
In terms of design, the BZT52C3V3S-TP diode has a typical 3.3-volt zener voltage, and can provide a current ratings of 350 mW. It has a forward voltage drop (VF) of 1.25 V and a reverse current leakage of 425 uA. The lead spacing is 3.2 mm, which makes it suitable for use in circuit boards with a narrow profile. The BZT52C3V3S-TP has a fast switching time, making it ideal for use in high-frequency circuits.
The BZT52C3V3S-TP diode is also suitable for use in telecommunications applications, such as amplifying signals, maintaining by-pass voltage, or creating noise-proof networks. The diode can also be used in voltage clamping circuits, where it can be used to limit the voltage at the output of various circuits. This limits the current and prevents any damage to the components.
The BZT52C3V3S-TP diode is one of the most versatile single-diode solutions available on the market. Because of its small profile and wide range of applications, it is often used in various consumer electronics, telecommunications, and industrial devices. Its wide range of characteristics and parameters make it one of the best solutions for reducing power consumption and maintaining accuracy in voltage regulation.
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