BZT52C5V6T-TP Discrete Semiconductor Products |
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Allicdata Part #: | BZT52C5V6T-TPMSTR-ND |
Manufacturer Part#: |
BZT52C5V6T-TP |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 5.6V 100MW SOD523 |
More Detail: | Zener Diode 5.6V 100mW ±7% Surface Mount SOD-523 |
DataSheet: | BZT52C5V6T-TP Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.02646 |
16000 +: | $ 0.02249 |
24000 +: | $ 0.02117 |
56000 +: | $ 0.01985 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±7% |
Power - Max: | 100mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Base Part Number: | BZT52C5V6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52C5V6T-TP is a silicon precision Zener diode suitable for applications requiring extremely precise voltage regulation or reference. It has the capability to deliver current up to 200 milliamps ensuring a stable voltage over a wide temperature range. The device has a maximum operating temperature of up to 125°C. It also has a maximum voltage of 6V and a maximum reverse power dissipation of 500 mW. It offers fast response times, low noise, and excellent regulation stability.
The BZT52C5V6T-TP is typically used in applications such as voltage regulation, switching power converters, and low power regulator circuits. In addition, it can also be used in automotive, industrial, and consumer electronic applications. It can also be used as a reference voltage device in a variety of digital, analog, and RF circuits.
The BZT52C5V6T-TP operates on the principle of Zener breakdown. Zener breakdown occurs when the applied electric field is greater than the "Zener Breakdown Voltage" of the device. This strong electric field causes the electrons in the conduction band of the semiconductor to be forced into the depletion region and results in the generation of a large number of electron-hole pairs. This process results in a sharp increase in current, which is referred to as the Zener Breakdown. When this current is limited by a resistor, a stable Zener voltage is produced.
The BZT52C5V6T-TP is capable of maintaining a stable voltage over a wide range of temperatures, currents, and line voltages. It is also designed to maintain voltage stability over time and offers minimal parasitic capacitance, ensuring that the device will perform reliably in a wide range of applications. Additionally, the device is also designed to maintain minimal noise and offer good overload protection. For these reasons, the BZT52C5V6T-TP is an ideal choice for precision voltage regulation or reference applications.
The specific data is subject to PDF, and the above content is for reference
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