![BZT52C75-HE3-08 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BZT52C75-HE3-08-ND |
Manufacturer Part#: |
BZT52C75-HE3-08 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 75V 410MW SOD123 |
More Detail: | Zener Diode 75V 410mW ±5% Surface Mount SOD-123 |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.02362 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 75V |
Tolerance: | ±5% |
Power - Max: | 410mW |
Impedance (Max) (Zzt): | 250 Ohms |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
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The BZT52C75-HE3-08 is a single Zener diode from a wide selection of products from the company ON Semiconductor. This diode consists of a single PN junction that rests between a P-type and N-type semiconductor, allowing for a single unidirectional current flow. This diode is able to conduct current in both directions and can even irregularly conduct it in a variety of ways depending on the applied voltages and current. These diodes are also able to block current in reverse, performing rectifying functions.
This Zener diode is typically used as a voltage regulator, but it\'s also commonly utilized in applications like switch mode rectification, avalanche current limiting, and fly-back power supplies. It features a maximum peak forward surge current of 2.4A, a maximum forward voltage of 1.30V at 1.5A, and a maximum repetitive reverse voltage of 75V. Its DC reverse current at 75V is substantially low at 1.0uA.
The BZT52C75-HE3-08 is suitable for use in clamping and bypassing circuits, and it’s specially designed to be compatible with standard Lead (Pb)-free, RoHS-compliant reflow assembly processes. This diode is also known by its manufacturer, ON Semiconductor, as a voltage regulator, current-limiting diode, or as a peak pulse power diode. It\'s often employed in other situations such as electronic switching applications, voltage division networks, and for the fulfillment of bias requirements in different applications such as integrated circuits or other components.
In terms of working principle, the BZT52C75-HE3-08 is much like any other diode; the current flows from the anode to the cathode depending on the applied voltage. When the applied voltage is lower than the Zener breakdown voltage of the diode, there is a reverse current flow from the cathode to the anode of the diode. This current flow is limited by the Zener breakdown voltage, forming a lower voltage system of voltage regulation.
In addition to its various application uses, the BZT52C75-HE3-08 provides many advantages. It has an improved energy efficiency, excellent noise protection, superior surge protection and thermal stability. The device also offers superior reproducibility, which eliminates the one-time failure issue. It also provides an improved physical shape with a reduced thermal resistance and lower noise as compared to other diodes in the same size package.
ON Semiconductor’s BZT52C75-HE3-08 Zener diode is a reliable, high quality component that is ideal for a range of voltage regulator, decay, and other power supply designs. This diode is designed for maximum performance and reliability in a wide range of temperatures and environmental stress levels. The simple, robust design ensures longevity and continues to provide reliable service in a variety of applications.
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