BZT52C9V1S-TP Allicdata Electronics
Allicdata Part #:

BZT52C9V1S-TPMSTR-ND

Manufacturer Part#:

BZT52C9V1S-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 9.1V 200MW SOD323
More Detail: Zener Diode 9.1V 200mW ±6% Surface Mount SOD-323
DataSheet: BZT52C9V1S-TP datasheetBZT52C9V1S-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03043
6000 +: $ 0.02646
15000 +: $ 0.02249
30000 +: $ 0.02117
75000 +: $ 0.01985
150000 +: $ 0.01764
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: BZT52C9V1
Description

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A BZT52C9V1S-TP diode is a popular component intended for use in applications as a voltage regulator and as a transient voltage suppressor. It is categorized as a single Zener diode, which are designed to be reverse biased and remain in a conducting state until a specified reverse voltage is reached. Above this voltage, the diode switches to a high resistance state and the voltage drops. This characterizes the operation of a Zener diode, which is different from a conventional diode.

A BZT 52C9V1S-TP diode is designed for use in applications with a power supply voltage in the range of 2.4V to 75V with an output current of up to 500mA. It has an integrated high-pressure transistor and is available in a surface mount package. This diode also has a low thermal impedance and is therefore suitable for a variety of applications and is manufactured in compliance with RoHS.

When a BZT52C9V1S-TP diode is in its reverse biased condition, the potential across the diode is distributed in a way such that the highest potential is at the anode, reducing in a linear manner as it reaches towards the cathode. When the reverse bias voltage increases to the point of a Zener breakdown in the internal region of the diode, a very intense current flow is caused and can result in the destruction of the device. Therefore, the BZT 52C9V1S-TP diode features a voltage clamp which limits the reverse current. This voltage clamp reduces the flow of current which protects the device from being damaged by excessive reverse current. In this way, the diode can protect electronics from being exposed to voltage or current fluctuations.

The BZT 52C9V1S-TP diode can be used in various applications including overvoltage protection of electrical circuits, interface circuit protection, EMI suppression, and voltage regulation. With its low thermal impedance and low leakage, it can provide overvoltage protection which is necessary to protect circuit components from dangerous currents caused by voltage spikes. The diode is also often used in interface applications, as it can protect systems from electrostatic discharge and other forms of interference.

The BZT52C9V1S-TP diode is also used in a variety of voltage regulation applications. It has a voltage regulation function in which the potential across the diode remains constant, even if the input voltage changes. The diode can be used to provide a regulated output voltage in applications such as switching power supplies, portable electronic devices, and other low voltage systems.

The BZT 52C9V1S-TP diode provides power supply protection and regulation in a variety of electronics applications. It is designed to operate with a low thermal impedance and a low leakage current, allowing the diode to reach its rated voltage while maintaining stability. This diode is a popular choice for overvoltage protection, interface protection, EMI suppression, and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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