Allicdata Part #: | BZT52HC5V6WF-7DITR-ND |
Manufacturer Part#: |
BZT52HC5V6WF-7 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER 5.6V 375MW SOD123F |
More Detail: | Zener Diode 5.6V 375mW ±7.14% Surface Mount SOD-12... |
DataSheet: | BZT52HC5V6WF-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03016 |
6000 +: | $ 0.02623 |
15000 +: | $ 0.02230 |
30000 +: | $ 0.02098 |
75000 +: | $ 0.01967 |
150000 +: | $ 0.01705 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±7.14% |
Power - Max: | 375mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123F |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52HC5V6WF-7 is a single Zener diode, a type of diode designed to conduct electrical current in one direction and prevent it in the other direction. These devices have many uses and range in voltages, currents and dynamic impedances. This particular diode\'s unique characteristics make it useful in many types of applications, allowing it to protect and provide steady voltages for circuits. It has a reverse breakdown voltage of 5.6 V and a maximum power dissipation rating of 500 mW.
The application areas of the BZT52HC5V6WF-7 include general electrical engineering, computing technology, automotive industry, industrial sensors and medical equipment. The device\'s reverse voltage protection makes it suitable for protecting circuits from high voltages. It is also used in overvoltage protection, termination of bus system signals, as an output stage reference diode and in automatic testing systems. In addition, it can be found in many consumer electronic products such as LCD TVs and DVD players.
The working principle of the BZT52HC5V6WF-7 is based on the Zener effect. This type of diode has two distinct types of layers. The first is the highly doped P-layer, or P-region, which forms the anode. The second is the highly doped N-layer, or N-region, which forms the diode’s cathode. This device is constructed in such a way that when the reverse or cathode voltage exceeds a certain value, called the Zener voltage, an avalanche breakdown of the P-layer occurs. As a result, the device allows current to flow from the anode to the cathode.
The main feature of the BZT52HC5V6WF-7 is its precise control of the reverse breakdown voltage. This is achieved by adjusting the doping concentrations of both P- and N-regions. The device also has a low dynamic impedance, resulting in decreased thermal performance and improved transient response. Additionally, it offers excellent electrical stability, making it ideal for over-voltage protection.
The BZT52HC5V6WF-7 is a safe and reliable diode when used in the right application. Despite its wide application range, it should not be used in circuits with high input energy, as this may cause the diode to overheat or even short-circuit. Furthermore, it should be carefully placed in the circuit to avoid heat build-up and possible damage to other components. With the right setup, it can be an effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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