BZT55C18-GS08 Discrete Semiconductor Products

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The BZT55C18-GS08 is a single Zener diode from the Diodes series. It is primarily used for applications involving direct current and has a power dissipation of 18 mW.

The BZT55C18-GS08 is used for voltage regulation and for that reason it has a specific reference to a nominal forward current and a maximum operation temperature. The nominal forward current of this diode is 200 mA and the maximum operating temperature is 85°C.

It features a Pb-free, halogen-free construction, which makes it an environmentally friendly choice for many applications. The diode also has a 5mm pitch lead spacing and comes in a RoHS compliant package.

In general, the BZT55C18-GS08 can be used in many applications, such as power supplies and low-voltage, AC-DC and DC-DC converters. It can also be used in RF circuits and other current controlling situations. The diode is an ideal choice for applications that require low operating temperature and improved reliability.

The BZT55C18-GS08 works due to the flow of electrons and the resonating effect that’s created between the P-type and N-type. The P-type side is negatively charged while the N-type is positively charged. This means that current will be drawn from the negative side to the positive side.

Also, the diode features a junction, which consists of two layers of differently doped material. When a forward bias voltage is applied, electrons are drawn to the P-type epitaxial layer, thus creating a current flow. The reverse biased junction prevents current from flowing in the opposite direction.

The Zener breakdown voltage of the BZT55C18-GS08 is from 6.8V to 7.2V. It also has an operating temperature range of -55°C to 85°C and a storage temperature range of -55°C to 150°C.

In conclusion, the BZT55C18-GS08 is a single Zener diode from the Diodes series that offers various applications. It is useful for voltage regulation and is highly reliable with a Pb-free, halogen-free construction. It works due to the flow of electrons and the resonating effect between the P-type and N-type and features a Zener breakdown voltage of 6.8 to 7.2V.

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