BZT55C2V4 L0G Allicdata Electronics
Allicdata Part #:

BZT55C2V4L0G-ND

Manufacturer Part#:

BZT55C2V4 L0G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 2.4V 500MW MINI MELF
More Detail: Zener Diode 2.4V 500mW ±5% Surface Mount Mini MELF
DataSheet: BZT55C2V4 L0G datasheetBZT55C2V4 L0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01548
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.4V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 85 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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The BZT55C2V4 L0G is a single, low-power zener diode which enables the efficient and reliable monitoring of critical regulated supply and reference circuits. The device is capable of handling higher current densities than other zeners, allowing for better power efficiency in applications where high currents are necessary. The device also works well in a wide temperature range, from -65°C to 125°C.

Designated for applications such as over-voltage protection and current limiting in a wide variety of environments, the BZT55C2V4 L0G diode is designed to be used with a shunt regulator circuit. This type of regulator operates on a totally different principle than conventional regulators, using a constant-current source to monitor the output voltage of a power supply or oscillator circuit. The current is adjusted to maintain an output voltage within a predetermined range. The maximum current rating of the BZT55C2V4 L0G is 2 amps.

The working principle of the BZT55C2V4 L0G diode is based on the principle of a voltage-dependent resistance (VDR). The physical component of the diode, known as the depletion region, changes in resistance depending on the applied voltage. When the applied voltage is higher than the diode’s breakdown voltage, the diode will draw enough current to efficiently limit the voltage. This protection function makes the device especially useful in high-voltage applications.

The BZT55C2V4 L0G also has an internal thermistor, which acts as a temperature-dependent current sink. This feature provides thermal protection in many electronic circuits, helping to protect the circuitry from overheating or current overload. Additionally, the internal construction of the device incorporates an internal guard ring, which provides additional protection from electrical stress and shorting.

The BZT55C2V4 L0G diode has a wide variety of uses. In many applications, it is used as a voltage reference or voltage limiter, allowing a circuit to safely operate within its predetermined voltage limits. Its low leakage current also makes it useful in precision circuits, allowing for the accurate sensing and control of a voltage source. In a power supply circuit, the BZT55C2V4 L0G can be used to prevent voltage spikes and surges, ensuring consistent performance. Other applications of the diode include reverse-diode current limiting, reverse polarity protection, overvoltage protection, and RF/IF situations.

The BZT55C2V4 L0G diode is a versatile device which can be used in a broad range of electronic circuits. Its unique low-power, high-efficiency characteristics make it an ideal choice for monitoring and controlling voltage in a variety of applications. The internal thermistor also provides effective protection against overheating or current overload, increasing the device’s reliability and durability. Thanks to its wide temperature range and internal protection, the BZT55C2V4 L0G is a reliable and dependable choice for any electronic circuit.

The specific data is subject to PDF, and the above content is for reference

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