BZT55C47-GS08

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The BZT55C47-GS08 is a Zener Diode designed for a wide range of applications. This diode is made from a silicon wafer and provides excellent electrical performance in most operating conditions. The BZT55C47-GS08 features a Pb-free package, low current consumption and high breakdown voltage.

The BZT55C47-GS08 is designed for voltage stabilization and for providing protection from inductive or capacitive spikes. The device is highly resistant to transient voltages, providing robust protection for a wide range of applications. This Zener Diode is especially suitable for automotive and consumer electronics applications.

The BZT55C47-GS08 is suitable for a wide operating temperature range, with a maximum operating voltage of 6.2 to 7.2V. The device is composed of a single diode in a low-profile, Pb-free surface-mount package. The device is also RoHS compliant and has excellent stability under dynamic conditions.

The BZT55C47-GS08 has a low dynamic resistance, allowing easy current regulation in a circuit. The low dynamic resistance provides for fast input and output switching, reducing the response time of a circuit and improving its overall performance. The device also provides excellent long-term stability, ensuring consistent performance over time.

The BZT55C47-GS08 has a low reverse recovery time, which helps to reduce the reverse current flow during switching. This low reverse recovery time allows for a low noise operation, making the device suitable for sensitive applications. The device also features a low forward voltage drop, which helps to reduce the overall power consumption of the circuit.

The BZT55C47-GS08 Zener Diode is designed to work as a collaborative element in a variety of tasks. It is used in ac-dc conversion, fast switching applications and dynamic load balancing. The device can also be used in switched mode power supplies, voltage stabilizers and voltage limiters, which help to protect other components in the circuit.

The BZT55C47-GS08 Zener Diode operates on a reverse conduction principle. The device is made with a higher junction voltage that allows it to breakdown into an avalanche breakdown. The reversed bias makes it impossible for the device to go into a forward conduction, unless the bias voltage is increased beyond the breakdown voltage. When the breakdown voltage is reached, the device allows current to flow in the reverse direction.

The BZT55C47-GS08 Zener Diode is designed for general purpose applications that require high reliability and performance. This device is perfect for automotive, consumer and industrial applications, where superior performance and long-term reliability are required. This device is also suitable for other low power applications, where space and cost are important considerations.

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