Allicdata Part #: | BZV85-C24,113-ND |
Manufacturer Part#: |
BZV85-C24,113 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 24V 1.3W DO41 |
More Detail: | Zener Diode 24V 1.3W ±5% Through Hole DO-41 |
DataSheet: | BZV85-C24,113 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.02911 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | ±5% |
Power - Max: | 1.3W |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 17V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 50mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
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Diodes today are typically utilized components that come in the form of both linear and switching types. This guide serves to briefly introduce the application field and working principle of the BZV85-C24, 113 diode. For this type, it is classified as a single Zener diode, a component in the reverse-biased breakdown area.
The simple structure of a BZV85-C24, 113 includes a single P-N junction, a semiconductor device that is usually composed of two dissimilar materials. Within the single P-N junction component, electrical current flow is only one-directional, outwards for the N-type material, and inward for the P-type. Due to the junction’s internal construction, no current is able to travel in the opposite direction.
In the semiconductor diode, the working principle is rooted in the internal construction of the component. It relies on the single P-N junction’s voltage. The two materials in the junction construct a barrier, which applies a positive electric field across the junction. The electric field force works against electrocution, to only allow current to move in the opposite direction than what is normal. This phenomenon is known as ‘reverse breakdown’. In this case, the BZV85-C24, 113 is a single Zener diode, also known as a unique form of reverse breakdown. The design of the single Zener diode allows more levels of control. The inverse voltage bias construction is ideal for suppressors and voltage regulators, allowing control of the voltage and current amounts that pass through the P-N junction.
The BZV85-C24, 113 diode is composed of semi-insulating Silicon and it is designed for operation in wide temperature range. The maximum power dissipation is 4 mW and the maximum Zener current (Iz) is 4 mA. The voltage reverse blocking tolerance is 5% and Iz is maintained within a 5% of its nominal value at a specified temperature. The device is suitable for applications such as clamping and transient suppression, as well as being employed in various linear and switching applications. Its primary application field is in the protection and conversion of circuits to provide reliable voltage division and a smart surge suppression, both of which help to maintain the operation of the circuit and prevent it from damage that may occur due to the external environment.
Though other components, such as voltage sources and transistors, can do similar work, the single Zener diode has the advantage of being small in size. This size reduction makes them preferable in tight spaces. Additionally, the components require low voltage energy and doesn’t require a lot of current for operations. Its use for voltage dividers also helps in maintaining the original suppression and ensures the circuit is free from any accidental circulation of current.
In conclusion, the BZV85-C24, 113 is typically classified as a single Zener diode, and is most ideally used in applications of suppression and voltage regulation. Components with similar functions may have size and current related advantages, but the Zener diode has the advantage in the form of functionality and voltage control.
The specific data is subject to PDF, and the above content is for reference
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