BZV85-C8V2,133

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	8.2V
Tolerance:	±5%
Power - Max:	1.3W
Impedance (Max) (Zzt):	5 Ohms
Current - Reverse Leakage @ Vr:	700nA @ 5V
Voltage - Forward (Vf) (Max) @ If:	1V @ 50mA
Operating Temperature:	-65°C ~ 200°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-41
Base Part Number:	BZV85C8V2

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Introduction

The BZV85-C8V2,133 is a Zener diode designed for use in a wide variety of applications. The device is a single device that is capable of handling high frequency and high current operations, as well as providing high stability across temperature ranges. While the device is primarily intended for use in precision resistor applications, it is also capable of being used in a wide range of applications such as automotive and industrial power circuits. This article will discuss the field of applications for the BZV85-C8V2,133, as well as the working principle of the device and its associated characteristics.

Application Field

The BZV85-C8V2,133 is a single device, meaning it can be used in a wide range of circuits and areas of application. The device is primarily intended for use as a Zener diode in precision resistor applications. These applications include automotive, industrial, and general telecommunications. Some of the other applications include reverse polarity protection, power distribution, drive circuits, voltage clamping, voltage regulation, and transient suppression.

Working Principle

The working principle of the BZV85-C8V2,133 is based on the principle of a Zener diode. The diode has two main terminals, a cathode and an anode. When a voltage is applied to the diode, current will flow in a particular direction depending on the polarity of the voltage. If the voltage is positive with respect to the cathode, current will flow forward and the diode will act like a normal diode, allowing current to flow from the anode to the cathode. If the voltage is negative with respect to the cathode, current will be forced to flow backwards, in the reverse direction. At a certain point, the reverse voltage will reach a zener voltage, which is determined by the breakdown voltage of the diode. This is known as the breakdown voltage or the zener voltage.At this point, current will not increase exponentially as it would with a normal diode, but will remain essentially constant and will be directly proportional to the value of the zener voltage. This is known as the "breakdown" or "zener effect", and this is what makes the Zener diode a useful device. Zener diodes are typically used for voltage regulation, transient suppression, and reverse polarity protection applications, as well as other precision resistor applications.

Device Characteristics

The BZV85-C8V2,133 has various characteristics and parameters associated with it, which can be used to determine its suitability for use in an application. These parameters include forward break-down voltage, power dissipation, forward voltage drop, operating temperature range, capacitance and capacitive current, reverse leakage current, reverse recovery time, junction temperature, and power factor. The forward break-down voltage of the BZV85-C8V2,133 is 8.5 volts at a current of 1mA, and the power dissipation is maximized at 73mW. The forward voltage drop of the device is typically below 1 volts at the nominal current of 1mA, while the operating temperature range is -55°C to +125°C. The capacitance of the diode is typically below 1 pF in the reverse bias range, with a reverse leakage current rating of max. 1 μA at 8.5 volts in the reverse bias range. The reverse recovery time of the device is typically below 20 ns. The junction temperature should be kept at 175°C or below, and its power factor should be kept at less than 1%.

Conclusion

The BZV85-C8V2,133 is a single diode designed for use in a wide variety of applications, especially precision resistor applications. The Zener diode is capable of handling high frequency and high current operations, as well as providing high stability across temperature ranges. The device has various parameters associated with it, such as its forward break-down voltage, power dissipation, forward voltage drop, operating temperature range, capacitance and capacitive current, reverse leakage current, reverse recovery time, junction temperature, and power factor. All of these parameters are important to consider when selecting a diode for use in an application.

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