| Allicdata Part #: | BZX55B16A0G-ND |
| Manufacturer Part#: |
BZX55B16 A0G |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 16V 500MW DO35 |
| More Detail: | Zener Diode 16V 500mW ±2% Through Hole DO-35 |
| DataSheet: | BZX55B16 A0G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01323 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 16V |
| Tolerance: | ±2% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 40 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 12V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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The BZX55B16 A0G is a single Zener diode device. It is used in applications where low leakage current with a high reverse breakdown voltage is required. It is also suitable for use in voltage reference and voltage clamping circuits.
The BZX55B16 A0G has a maximum power dissipation of 500 mW and a maximum continuous peak reverse current of 10 mA. It has a reverse breakdown voltage of 16 V and a reverse voltage range of 6.8 V up to 20 V. It has a capacitance of 5.8 pF at 0 V and a junction temperature of 150 °C.
The BZX55B16 A0G is designed to provide a stable low-noise voltage reference. It is designed to provide a reliable, low-noise reference for a wide range of applications. It can be used in systems where the voltage reference is used to convert a signal from one range to another. The BZX55B16 A0G can also be used to provide a stable steady-state threshold for a variety of analog circuits.
The BZX55B16 A0G has a working principle based on the Zener diode operation. This diode is designed to maintain a nearly constant reverse-voltage drop across itself when the diode is reverse biased. This voltage is typically low enough to offer protection against reverse-bias voltages, while still providing a low enough resistance to allow current to flow through the diode in the reverse direction. The BZX55B16 A0G has a very low reverse-bias breakdown voltage and is designed to be able to withstand high reverse currents without suffering thermal runaway or damage.
In applications where a stable reference voltage is needed, the BZX55B16 A0G can be used. It is ideal for use in systems that require a low-noise, ultra-stable reference voltage. It can also be used in voltage-clamping and voltage-shifting applications.
The BZX55B16 A0G is a very versatile diode device and is suitable for a wide range of applications. It is an ideal choice for applications where a low-noise, stable and reliable voltage reference is needed.
The specific data is subject to PDF, and the above content is for reference
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| BZX55B5V1 A0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
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| BZX55C10-TAP | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 10V 500MW DO3... |
| BZX55C5V1 A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
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BZX55B16 A0G Datasheet/PDF