BZX55B4V3 A0G

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Diodes are semiconductor devices that are used to control the flow of electric current in a circuit. In particular, Zener diode or ZD, also known as a regulating diode, is a special type of diode transistor that operates in the reverse-bias breakdown region to control the voltage in a circuit and protect it from excessive voltages. BZX55B4V3 A0G is a single Zener diode that is widely used for various application fields. This article will provide an overview of the common application fields and working principles of the BZX55B4V3 A0G.

The BZX55B4V3 A0G is a single Zener diode that is widely used to regulate the voltage in a circuit. It is a low-power device with a low maximum power dissipation of 500mW. It has a breakdown voltage of 4.3V, with a zener impedance of less than 5 Ohms at its rated operating temperature. The diode has a low leakage current of 0.005mA, making it suitable for applications that require high precision. The device also has a tight voltage regulation of +/-1%, making it suitable for applications where an exact voltage is required.

The BZX55B4V3 A0G is commonly used in power-supply circuits, over-voltage protection circuits, voltage regulators, and general-purpose voltage references. The device can be used to protect electronics from over-voltage spikes, stabilize the voltage output of power supplies, and provide a stable output voltage to prevent battery drainage. It can also be used as a temperature controller, as it can maintain a constant output voltage even as its temperature changes.

In terms of its working principle, the BZX55B4V3 A0G uses the reverse-biased breakdown process to operate. In reverse-biased breakdown, the applied voltage increases until the diode breaks down, at which point an avalanche current starts flowing in the circuit. This avalanche current is confined by the physical boundaries of the diode, which limits the applied voltage and results in a fixed voltage drop across the diode.

The BZX55B4V3 A0G typically operates in the Avalanche Breakdown Mode where the voltage is applied to its anode. As the applied voltage increases, the diode begins to conduct, and when the breakdown voltage is reached, it will enter the reverse breakdown region and undergo a sharp increase in its conductivity. This phenomenon allows the current to pass through the diode in a bidirectional manner and the voltage stays constant. As a result, the BZX55B4V3 A0G provides a constant voltage for the device.

The BZX55B4V3 A0G is a single Zener diode with a wide range of applications and a working principle that is based on the reverse-biased breakdown phenomenon. It is widely used for over-voltage protection, voltage regulation and general-purpose voltage reference. It has a low maximum power dissipation of 500mW, a breakdown voltage of 4.3V, a zener impedance of less than 5 Ohms and a tight voltage regulation of +/-1%, making it ideal for applications that require precise and stable voltages.

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