Allicdata Part #: | BZX55B5V6A0G-ND |
Manufacturer Part#: |
BZX55B5V6 A0G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 5.6V 500MW DO35 |
More Detail: | Zener Diode 5.6V 500mW ±2% Through Hole DO-35 |
DataSheet: | BZX55B5V6 A0G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01932 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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Diodes - Zener - Single
The BZX55B5V6 A0G is a single zener diode that is frequently used in various electronic applications. It is a smaller, more efficient version of the classic zener diode, which was once widely used in electronics. The BZX55B5V6 A0G is a two-pin semiconductor device that is part of an electrical circuit and provides electrical isolation of two sections of the circuit by acting as a one-way path for current flow. It is often used for voltage regulation, temperature compensation, and surge protection in a variety of applications.
A typical BZX55B5V6 A0G is constructed from a strong semiconductor material. The size of this semiconductor material is small, typically only a few millimeters in length. The semiconductor material is able to absorb energy, in the form of heat, and store it in the internal energy band structure of the material. When the stored energy exceeds the critical value known as the breakdown voltage, a current will flow in the forward bias direction and be able to pass smoothly through the base element of the semiconductor material.
The BZX55B5V6 A0G is popularly used to provide voltage regulation in an electrical circuit. The internal structure of the diode allows for the breakdown voltage to be adjustable by means of the width of the gate region. In most applications, the gate width is adjusted to the specific voltage level desired for the device. When the main positive voltage supply exceeds the threshold set by the size of the gate region, a proportional current will flow from the main positive voltage to the gate region. This current will then flow from the gate region to the negative voltage potential acting as a one-way path for voltage regulation.
The BZX55B5V6 A0G diode is often used in devices that require temperature compensation. This type of diode inherently changes its conductive state with temperature changes. This behavior is useful in providing a stable and reliable path for current flow when the temperature of a circuit changes. Additionally, the BZX55B5V6 A0G is also used to provide surge protection in various circuits. During a power surge, the breakdown voltage of the diode will be exceeded and current will flow from the surge voltage to the breakdown voltage, thus providing a protection for other components.
In conclusion, the BZX55B5V6 A0G is a single zener diode that is ideally used in a wide variety of electronic applications. It is constructed from a semiconductor material and is characterized by its adjustable breakdown voltage. The BZX55B5V6 A0G is commonly used for voltage regulation, temperature compensation, and surge protection.
The specific data is subject to PDF, and the above content is for reference
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