| Allicdata Part #: | BZX584C10-V-G-08GITR-ND |
| Manufacturer Part#: |
BZX584C10-V-G-08 |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 10V 200MW SOD523 |
| More Detail: | Zener Diode 10V 200mW ±5% Surface Mount SOD-523 |
| DataSheet: | BZX584C10-V-G-08 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.04234 |
| 6000 +: | $ 0.03810 |
| 15000 +: | $ 0.03387 |
| 30000 +: | $ 0.03175 |
| 75000 +: | $ 0.02822 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 10V |
| Tolerance: | ±5% |
| Power - Max: | 200mW |
| Impedance (Max) (Zzt): | 20 Ohms |
| Current - Reverse Leakage @ Vr: | 200nA @ 7V |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-79, SOD-523 |
| Supplier Device Package: | SOD-523 |
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Diodes - Zener - Single
The BZX584C10-V-G-08 is a type of single Zener diode that has a wide range of applications. The characteristics and parameters of this diode make it suitable for a variety of applications, from regulated power supply and sample and hold circuits, to reverse breakdown protection and clamping circuits.
Application Fields
The BZX584C10-V-G-08 is mainly used as an active voltage regulator, protecting circuits from overvoltage and ESD (electrostatic discharge) events. It can be used as a standard zener diode with its rated reverse breakdown voltage of 10V, or as an adjustable voltage regulator, where the voltage is controlled by an external resistor, making it ideal for a variety of circuits and applications.
The flexibility of this diode makes it suitable for a variety of situations. It is commonly used in voltage regulator and protection circuits, sample and hold circuits, timing circuits, and signal generators.
It can also be used in a variety of other circuits, including clamping circuits, pulse shaping and peak voltage limiting circuits, temperature compensation circuits, and reverse breakdown protection circuits.
Working Principle
The BZX584C10-V-G-08 is a type of zener diode, which is designed to operate in reverse breakdown mode. This means that the diode can be operated at a reverse bias voltage below its rated breakdown voltage, and will regulate the voltage at its reverse break voltage regardless of current.
When operating in reverse breakdown mode, current will flow from anode to cathode, but only to a specific level which is determined by the device’s breakdown voltage. This means that the device acts as a voltage regulator, maintaining a constant flow of current despite fluctuations in the input voltage.
The BZX584C10-V-G-08 also has a low reverse leakage current, meaning it is suitable for applications where the current is low. This makes it ideal for use in a wide range of circuits, including those where precision current control is required.
Conclusion
The BZX584C10-V-G-08 is a type of single Zener diode. It is suitable for a variety of applications, including voltage regulation and protection circuits, sample and hold circuits, timing circuits, and clamping circuits. It is particularly suitable for use in circuits where low reverse leakage current is required. It works by regulating the voltage at its rated reverse breakdown voltage, regardless of current.
The specific data is subject to PDF, and the above content is for reference
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| BZX55F8V2-TR | Vishay Semic... | 0.0 $ | 1000 | DIODE ZENER 8.2V 500MW DO... |
| BZX55C7V5-TR | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 7.5V 500MW DO... |
| BZX585-C5V1,135 | Nexperia USA... | 0.03 $ | 1000 | DIODE ZENER 5.1V 300MW SO... |
| BZX55C43-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 43V 500MW DO3... |
| BZX55C75 A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 75V 500MW DO3... |
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| BZX585B51 RKG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 51V 200MW SOD... |
| BZX585B3V0 RSG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 3V 200MW SOD5... |
| BZX55C3V3 | ON Semicondu... | -- | 1000 | DIODE ZENER 3.3V 500MW DO... |
| BZX55C4V7-TAP | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 4.7V 500MW DO... |
| BZX585-C7V5,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 7.5V 300MW SO... |
| BZX585-C9V1,115 | Nexperia USA... | 0.22 $ | 273 | DIODE ZENER 9.1V 300MW SO... |
| BZX585B5V1 RSG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
| BZX585-B15,135 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 15V 300MW SOD... |
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| BZX55F6V8-TR | Vishay Semic... | 0.0 $ | 1000 | DIODE ZENER 6.8V 500MW DO... |
| BZX585B10 RSG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 10V 200MW SOD... |
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| BZX55C3V3-TAP | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 3.3V 500MW DO... |
| BZX585-C16,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 16V 300MW SOD... |
| BZX585-C22,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 22V 300MW SOD... |
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| BZX55C22 A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 22V 500MW DO3... |
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BZX584C10-V-G-08 Datasheet/PDF