| Allicdata Part #: | BZX55C11-TR-ND |
| Manufacturer Part#: |
BZX55C11-TR |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 11V 500MW DO35 |
| More Detail: | Zener Diode 11V 500mW ±5% Through Hole DO-35 |
| DataSheet: | BZX55C11-TR Datasheet/PDF |
| Quantity: | 1000 |
| 30000 +: | $ 0.01548 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 11V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 20 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 8.2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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Diodes are electrical components used in various applications such as rectification, bypassing and protection. Zener diodes are one of the most widely used of this category of components. A Zener diode is a device that utilizes reverse breakdown characteristics to ensure the voltage across its terminals remains fixed at a predetermined level. The BZX55C11-TR is one such type of Zener diode with a rated breakdown voltage of 5.1 volts.The BZX55C11-TR is made of a junction formed between N-type and P-type semiconductor materials as opposed to other Zener diodes which are made of single p-type material. The addition of the N-Type material allows for the reverse breakdown voltage to be adjusted to the desired level more easily. BZX55C11-TR diodes are typically used in DC-DC converters, audio power amplifiers, power supplies and other low noise applications.
The operating principle of a Zener diode is based on avalanche breakdown. When the reverse voltage across the device is equal to or greater than the breakdown voltage, a large current (avalanche) will begin to flow due to a sudden decrease in resistance. This avalanche is moderated by the addition of N-type material, and the result is a steady voltage across the diode despite the current changes. The advantage of this characteristic is that it allows the use of Zener diodes in applications where a constant voltage is required.
The BZX55C11-TR is capable of handling up to 500mA of peak forward current and is composed of a silicon die housed in a standard TO-92 (invisible leaded) package. The device has a power dissipation rating of 500mW, and its storage and operating temperature ranges are -55°C to +100°C. The device has an internal capacitance of 30pF and is available in either an axial or a radial package.
The BZX55C11-TR is an ideal choice for DC-DC converters, audio power amplifiers, power supplies, and other low noise applications thanks to its excellent noise performance, low power dissipation, and wide operating temperature range. The device is also reliable, low cost, and easy to use. In addition, its low stress on the components makes it a suitable choice for designs that require superior performance and reliability.
Overall, the BZX55C11-TR is an excellent choice for low voltage applications due to its avalanche breakdown operating principle and its high stability, which make it the ideal choice for DC-DC converters, audio power amplifiers, power supplies and other low noise applications. Despite its small size and low cost, the BZX55C11-TR is still able to offer excellent performance while providing maximum value.
The specific data is subject to PDF, and the above content is for reference
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BZX55C11-TR Datasheet/PDF