Allicdata Part #: | BZX55F8V2-TR-ND |
Manufacturer Part#: |
BZX55F8V2-TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 8.2V 500MW DO35 |
More Detail: | Zener Diode 8.2V 500mW ±1% Through Hole DO-35 |
DataSheet: | BZX55F8V2-TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 6.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are vital and versatile electronic components that can be used to convert alternating currents (AC) into direct currents (DC). The Zener Diode, often referred to as a voltage-regulating device, is made up of a semiconductor material with a junction between a P-type and N-type material, allowing it to serve as a voltage reference or a surge protector. This type of diode can also be used to protect delicate and sensitive components from hazardous voltage levels.
The BZX55F8V2-TR is a single Zener diode offering maximum ratings of 5.5V and 375mW. It is based on a Planar semiconductor architecture that makes it suitable for applications such as switching, clamping and protection in systems sensitive to transient noise generated by unwanted sources of electromagnetic interference (EMI). It is designed for use in consumer electronics and other general-purpose applications.
The working principle of the BZX55F8V2-TR is based on the Zener effect. The voltage applied to its anode is compared to the Zener voltage, VZ. When a voltage is applied to the anode, which is higher than VZ, the diode conducts electricity in both forward- and reverse-direction, allowing the current to flow through the P-N junction. If the voltage is lower than VZ, the diode only conducts electricity in the forward-direction and no current is allowed to flow in the reverse-direction.
This device has an efficient low-noise Zener structure, making it suitable for use in mobile phones, portable electronics, wire-line and wireless communications, personal computers and so on. Its planar architecture allows for low power consumption and high yield. Additionally, it provides a clamping voltage of up to 5.5V and a reverse-breakdown voltage of 5.0V. This ensures reliability of the circuit under various working conditions.
In terms of packaging, the BZX55F8V2-TR is housed in a single SOD323 package, which has an insulating material that provides a high level of electrical isolation between the internal and external circuits. This allows for the integration of the device into a variety of circuit configurations.
The BZX55F8V2-TR can be used in many applications including voltage regulation, over-voltage protection and current limiting. It is also used in systems to protect against transient peaks and high frequency noise spikes generated from EMI or electromagnetic pulse (EMP).
In conclusion, the BZX55F8V2-TR single Zener diode is a versatile and reliable device that can be used in a variety of applications. It is based on a planar semiconductor architecture and offers a 5.5V and 375mW maximum rating. Its Zener effect allows the device to conduct electricity in both forward- and reverse-direction when the voltage is higher than VZ, thus providing over-voltage protection. Additionally, it is housed in a single SOD323 package that provides a high level of electrical isolation and low power consumption. The device can be used in applications such as voltage regulation, over-voltage protection and current limiting.
The specific data is subject to PDF, and the above content is for reference
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