BZX55C20-TAP Discrete Semiconductor Products |
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Allicdata Part #: | BZX55C20-TAPGITB-ND |
Manufacturer Part#: |
BZX55C20-TAP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 20V 500MW DO35 |
More Detail: | Zener Diode 20V 500mW ±5% Through Hole DO-35 |
DataSheet: | BZX55C20-TAP Datasheet/PDF |
Quantity: | 20000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 55 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 15V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZX55C20-TAP is a single Zener diode designed for providing voltage stabilization to a circuit. It is a 3-terminal device that is characterized by its low current (lower than a few milliamps) and its low breakdown voltage (20 volts). The diode also exhibits relatively low forward voltage drop and a low temperature coefficient.
The BZX55C20-TAP is commonly used in automotive, computer, telecommunications, consumer electronics and other electronic circuits where voltage stabilization is important. It is also often used in applications where low power consumption is desired. The diode is also used in high-speed mobile applications, such as those that are found in laptops and cell phones, where the low power consumption of the diode helps conserve battery life.
The diode is composed of a P-type material surrounded by a high quality dielectric material to prevent short circuiting and to keep the voltage stability of the device within specified limits. This material also prevents the device from being adversely affected by moisture, dust, and other contaminants. The P-type material has a relatively low resistance, allowing the device to draw current when the voltage exceeds the breakdown voltage. At the same time, when the voltage is below the breakdown voltage, the current is sufficiently low to prevent damage to the device.
The diode works by allowing low voltage flows through the P-type material until the breakdown voltage is reached. At this point, a small portion of the current passes through the dielectric material and is stabilized by the high quality N-type material. The voltage is then not allowed to exceed the breakdown voltage, allowing the circuit to remain stabilized. The device also has a relatively low reverse leakage current so that any voltage spikes that may occur are quickly suppressed.
The BZX55C20-TAP can be used in many different applications, including industrial, automotive, and consumer electronics. The device is often used in circuits where voltage stabilization and power dissipation can be a major issue. The device can be used in a variety of configurations, including a stand-alone Zener diode, a Zener diode along with other components, or a bridge configuration. The device can also be used as a voltage regulator in circuits where a steady output voltage is desired.
Due to its low voltage and low current capabilities, the BZX55C20-TAP is ideal for use in applications that require a low power consumption and stable voltage supply. The device is also able to handle voltages up to the breakdown voltage without any detrimental effects to the device. These features make it an ideal choice for those applications that require voltage stabilization without the need for a large amount of power.
The specific data is subject to PDF, and the above content is for reference
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BZX584C2V4-V-G-08 | Vishay Semic... | 0.05 $ | 3000 | DIODE ZENER 2.4V 200MW SO... |
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BZX584C3V9-V-G-08 | Vishay Semic... | 0.05 $ | 1000 | DIODE ZENER 3.9V 200MW SO... |
BZX584C5V6-V-G-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 5.6V 200MW SO... |
BZX585-C22,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 22V 300MW SOD... |
BZX585-C75,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 75V 300MW SOD... |
BZX585-C6V8,135 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 6.8V 300MW SO... |
BZX585-C6V8,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 6.8V 300MW SO... |
BZX585-C4V7,135 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 4.7V 300MW SO... |
BZX585-C8V2,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 8.2V 300MW SO... |
BZX585-B6V8,135 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 6.8V 300MW SO... |
BZX585-B6V8,115 | Nexperia USA... | 0.06 $ | 1000 | DIODE ZENER 6.8V 300MW SO... |
BZX585-B7V5,135 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 7.5V 300MW SO... |
BZX585-B7V5,115 | Nexperia USA... | 0.06 $ | 1000 | DIODE ZENER 7.5V 300MW SO... |
BZX585-B4V7,135 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 4.7V 300MW SO... |
BZX585-B4V7,115 | Nexperia USA... | 0.06 $ | 1000 | DIODE ZENER 4.7V 300MW SO... |
BZX585-B3V9,135 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 3.9V 300MW SO... |
BZX585-B3V9,115 | Nexperia USA... | 0.06 $ | 1000 | DIODE ZENER 3.9V 300MW SO... |
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BZX585-C3V3,135 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 3.3V 300MW SO... |
BZX585-C6V2,135 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 6.2V 300MW SO... |
BZX585-C9V1,135 | Nexperia USA... | 0.03 $ | 1000 | DIODE ZENER 9.1V 300MW SO... |
BZX585-C15,135 | Nexperia USA... | 0.03 $ | 1000 | DIODE ZENER 15V 300MW SOD... |
BZX585-C15,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 15V 300MW SOD... |
BZX585-C2V4,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 2.4V 300MW SO... |
BZX585-C5V1,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 5.1V 300MW SO... |
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