BZX55F13-TAP

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	13V
Tolerance:	±1%
Power - Max:	500mW
Impedance (Max) (Zzt):	26 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 10V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

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IntroductionBZX55F13-TAP is a single, high peak power zener diode designed for a variety of low voltage applications. It is designed for small-signal clamping and for protecting small-signal circuits from electrostatic/electrical transients. This diode features a zener voltage of 13V and a breakdown voltage of 12.5V, allowing it to be integrated into a wide range of circuit architectures.Application FieldBZX55F13-TAP is ideal for a wide range of low voltage applications. Typical applications include small-signal overvoltage protection, low voltage power supply clamps, and clamping of electronic signals such as logic circuits, logic families, and digital logic signals. This diode can also be used for controlling surge current, providing transient protection for small-signal circuits, and “snubbing” of ringing caused by load voltage transients. BZX55F13-TAP can be used in a variety of applications, including: 1. Clamping circuits in low voltage power supply systems.2. Clamping non-linear circuits such as logic families, logic circuits, and digital logic signals.3. Protecting small-signal circuits from static/electrical transients.4. Controlling surge current.5. Reducing ringing in load voltage transients.Working PrincipleIn low voltage applications, BZX55F13-TAP Zener diodes operate by a process of “avalanche breakdown.” This is a process in which electrons (electron-hole pairs) in the oxide layer of the diode become ionized and begin to conduct current. When a voltage is applied to the diode which is above the breakdown voltage, the electrons become energized and accelerate, colliding with atoms in the oxide layer to create electron-hole pairs, which in turn creates a flow of current. The current through the diode is limited by the diode’s internal impedance, which is typically, in the case of BZX55F13-TAP, around 7.5 ohms. To prevent an excessive amount of current flowing through the diode, the current is regulated by the built-in resistive element (which is determined by the design of the diode packaging). As such, the diode can serve as a voltage regulator and as a current limiting device in order to protect circuits from damaging levels of current.ConclusionIn conclusion, the BZX55F13-TAP Zener diode is a single, high peak power zener diode designed for a variety of low voltage applications. It is designed to clamp and protect small-signal circuits from electrostatic/electrical transients and is ideal for a wide range of applications such as logic families, logic circuits, digital logic signals, and low voltage power supply clamps. It operates by a process of “avalanche breakdown” and is able to regulate current due to its internal impedance and built-in resistive element.

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