Allicdata Part #: | BZX55F33-TAP-ND |
Manufacturer Part#: |
BZX55F33-TAP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±1% Through Hole DO-35 |
DataSheet: | BZX55F33-TAP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 24V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Zener - Single
The BZX55F33-TAP is a single Zener diode that has a wide range of application fields and a distinctive working principle.The main functionality of any Zener diode is voltage regulation, allowing the voltage to remain constant despite irregularities in the current flow. The BZX55F33-TAP diode is capable of handling up to 33 V and has a minimum breakdown voltage of 27V.
Application Field
The BZX55F33-TAP is used in many applications. It is commonly used in circuit protection devices, voltage regulators, voltage references, transient suppression, and in low-power automotive applications. Its most common application is in regulating 12V power supplies. The diode also has applications in data communications and numerous other high-frequency circuits.
Working principle
The working principle of the BZX55F33-TAP Zener diode is based on the unique characteristics of its p-n junction. The p-n junction of the diode is a very thin layer of silicon, or other semiconducting material, which acts as an electrical barrier between two distinct regions. When forward biased current is applied, the p-n junction passes a very small amount of current, but when reversed biased current is applied, no current flows through. However, when the reverse bias voltage exceeds the breakdown voltage of the diode, a small amount of current can flow.
When a voltage is applied in reverse bias across the p-n junction of the BZX55F33-TAP Zener diode, a large electric field is created and electrons from the p-side flow across the junction, to be replaced by holes from the n-side. These electrons then enter the conduction band of the n-side. This enables a small reverse current to flow from the n-side to the p-side of the diode. The electric field generated across the junction is strong enough to prevent further current flow and consequently keeps the voltage across the diode constant, thus creating the basis of a voltage regulation circuit.
Conclusion
In conclusion, the BZX55F33-TAP Zener diode is a useful and versatile device with a wide range of applications and a distinctive working principle. It is a common choice for 12V power supplies, voltage regulators, and various other circuits due to its proven reliability and high performance.
The specific data is subject to PDF, and the above content is for reference
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