BZX55F33-TR

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The BZX55F33-TR is a single Zener diode component designed to act as a voltage regulator. It is part of a family of Zener diode products designed with a breakdown voltage of 33 volts and a maximum power dissipation of 500 milliwatts.

The BZX55F33-TR is available in multiple types of packages such as a DO-35 or SOD-323, and is manufactured using NXP’s advanced silicon-based technology. It is also designed to be a surface mount component, a feature which allows for its assembly onto small and complex circuit boards.

BZX55F33-TR\'s main application field is the transient voltage protection circuit, where the protection terminal needs to be electrically isolated from the protected terminal. As such, its desirable attributes are low voltage clamping and high temperature operation. The device is used as a protective element in systems, to prevent destruction due to clamping current flow during an electrical surge or short circuit.

The BZX55F33-TR is designed to work within the fourth region of the diode, which is the Zener region. This region is characterized by increasing reverse saturation current and increasing Zener voltage as the current increases. When a reverse-bias voltage is applied to the device, the current passes through the depletion layer and forms an electrical potential barrier. The potential barrier helps control the current, and the BZX55F33-TR only allows a certain amount of current to pass through. This helps in protecting the system from overvoltage or excessive current.

The BZX55F33-TR is also designed to work as a clamp that limits the voltages at the reverse-bias nodes. It does this by regulating the current to a specific level and thereby preventing any overvoltages or excess currents from occurring. The BZX55F33-TR works in a similar manner to an overvoltage suppression diode, but the difference is that a Zener diode offers more precise voltage regulation and greater power dissipation.

In conclusion, the BZX55F33-TR is a single Zener diode component designed to act as a voltage regulator within the fourth region of the diode, thus making it an ideal component for transient voltage protection applications where protection and isolation are needed. The component is available in multiple types of packages and is manufactured using NXP’s advanced silicon-based technology. It is designed to work as a clamp that limits the voltages at the reverse-bias nodes, thereby protecting the system from overvoltage or excessive current flows.

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