Allicdata Part #: | BZX584B12RKG-ND |
Manufacturer Part#: |
BZX584B12 RKG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 12V 150MW SOD523F |
More Detail: | Zener Diode 12V 150mW ±2% Surface Mount SOD-523F |
DataSheet: | BZX584B12 RKG Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.03149 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±2% |
Power - Max: | 150mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523F |
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A BZX584B12 RKG single Zener diode is an electronic component designed to produce a voltage between two terminals that remains stable despite fluctuations in electric current. This regulatory device acts according to the principle of a Zener diode, in which a junction of materials with different electric properties are exposed to a reverse bias voltage, after which the voltage required to force a reverse electric current on this junction is obtained. This voltage remains constant despite changes in electric current passing through it.
The BZX584B12 RKG is a high-density low-noise single Zener diode, possessing a maximum power dissipation rating of 500 mW, with a maximum Zener impedance of 50 ohms. It features a 12-volt maximum Zener voltage (VZ) and a 0.25 maximum dynamic impedance (IZSM). This diode is housed in a 1.6mm x 0.8mm surface-mount package, rendering it an ideal fit for applications in which the highest level of noise-reduction and power dissipation are required.
The BZX584B12 RKG is used in various applications, with the most common ones being voltage regulation, waveform clamping, electronic voltage and current control, and prevention of reverse current. It is also used in digital and analog circuits to suppress electrical noise and transient voltages, thus protecting the circuit components from damage. Its ability to maintain a stable voltage with variations in current and temperatures make it an ideal choice for many electronic applications.
The BZX584B12 RKG follows the working principle of a Zener diode. It has two terminals, namely a cathode and an anode, with the anode being a positive terminal and the cathode being a negative terminal. When a reverse bias voltage is applied to the diode, the voltage required to initiate new electric current is achieved. This voltage is given by the breakdown voltage of the diode, which is the same for all diodes. Once this voltage is reached, the electric current passes through the diode allowing it to conduct electric current. The ampere value of the current is determined by the voltage applied to the device.
This single Zener diode is designed to be used with a bias voltage of between 0 V to 12 V, beyond which the device\'s performance cannot be guaranteed. It requires a maintenance voltage of between 2 V to 10 V and has a reverse current leakage of 10 μA at a PIV of 6 V. The BZX584B12 RKG is a highly efficient diode having a very low noise profile and a maximum power dissipation rating of 500 mW.
The BZX584B12 RKG single Zener diode is a versatile device that can be used in a number of applications. Its ability to maintain a constant voltage in the presence of variations in electric current and temperature makes it an ideal choice for electronic circuits requiring high-level noise reduction and power dissipation. Its reverse current leakage is also low making it an effective device in voltage regulation and waveform clamping applications.
The specific data is subject to PDF, and the above content is for reference
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