BZX585-B12,115 Allicdata Electronics
Allicdata Part #:

1727-4994-2-ND

Manufacturer Part#:

BZX585-B12,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 12V 300MW SOD523
More Detail: Zener Diode 12V 300mW ±2% Surface Mount SOD-523
DataSheet: BZX585-B12,115 datasheetBZX585-B12,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05186
6000 +: $ 0.04668
15000 +: $ 0.04149
30000 +: $ 0.03890
75000 +: $ 0.03457
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±2%
Power - Max: 300mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Base Part Number: BZX585B12
Description

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Diodes - Zener - Single

The BZX585-B12,115 is a type of single Zener diode. It belongs to a family of Zener diodes, which are used to regulate voltages to a stable amount within a particular threshold range. The device is constructed using a semiconductor material and features a single junction. This means that current only has permission to pass through the diode in a single direction.

The BZX585-B12,115 has a breakdown voltage of 12.5V and it operates with a power dissipation of 400mW. It is capable of providing a wide range of voltages between 10V and 17V, depending on the application. The device is encapsulated inside a 1.9 x 1.8mm package and has a maximum reverse leakage current of 0.1mA at a maximum temperature of 25 degrees Celsius.

Application Field

The main application of the BZX585-B12,115 is to provide a steady, regulated voltage in various applications. The device is mainly used in switching power supplies, current limiting for LED drivers, RF systems, automotive applications, and many other applications.

The device is well-suited for use in circuits that require low power dissipation and a stable voltage. It is able to handle high currents and protect circuits against overvoltage. It is also capable of withstanding extreme temperatures, which makes it useful in many temperature-sensitive applications.

The device is rated to operate in a -55°C ~ 125°C temperature range. It is suitable for use in high-temperature environments, such as thermal insulation, military systems, and vehicle applications. The device can also be used in general-purpose electronics, audio amplifiers, DC-DC converters, and many other applications.

Working Principle

The BZX585-B12,115 operates according to the principle of voltage regulation. It provides a steady output voltage, regardless of changes in input voltage or load current. The device is capable of dissipating excess current through a process of avalanche breakdown. This means that the device will break down when the voltage across it reaches a certain threshold.

The device works by conduction electron-hole pairs due to a potential voltage across the Zener junction. The current flows through the device in a single direction when the voltage is above the breakdown voltage. The device will then regulate the output voltage in order to maintain the breakdown voltage. The BZX585-B12,115 is designed to provide a stable output voltage over a wide range of input voltages and load currents.

The device is able to regulate the output voltage in order to maintain the breakdown voltage. The breakdown voltage is dependent on the material type and geometric structure of the Zener diode. The Zener diode used in this device is constructed of a special epitaxial silicon with a breakdown voltage of 12.5V.

Conclusion

The BZX585-B12,115 is a single Zener diode used to provide a regulated voltage to various applications. The device is mainly used in switching power supplies, LED drivers, RF systems, and automotive applications. It is capable of providing a wide range of output voltages, depending on the application. The device works by conduction electron-hole pairs through a process of avalanche

The specific data is subject to PDF, and the above content is for reference

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