| Allicdata Part #: | BZX585-C12,135-ND |
| Manufacturer Part#: |
BZX585-C12,135 |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | DIODE ZENER 12V 300MW SOD523 |
| More Detail: | Zener Diode 12V 300mW ±5% Surface Mount SOD-523 |
| DataSheet: | BZX585-C12,135 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.03461 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 12V |
| Tolerance: | ±5% |
| Power - Max: | 300mW |
| Impedance (Max) (Zzt): | 10 Ohms |
| Current - Reverse Leakage @ Vr: | 100µA @ 8V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 100mA |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-79, SOD-523 |
| Supplier Device Package: | SOD-523 |
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BZX585-C12,135 Application Field and Working Principle
The BZX585-C12,135 is a single Zener diode. It is typically used in circuit protection and voltage regulation applications. Its low forward voltage drop, broad temperature range, and small size make it ideal for a variety of applications including use with both digital and linear circuits.
Application Field
The BZX585-C12,135 is a single Zener diode with a breakdown voltage of 12.135V and a power dissipation of 500mW. It is widely used in many different circuit protection and voltage regulation applications such as providing over-voltage protection and providing a reference voltage for A/D and D/A converters. The low forward voltage drop and small size make it well suited for use as a shunt regulator in many different settings.
This diode is often used in automotive applications requiring reliable and durable components. The high temperature range and low forward voltage drop make it suitable for use under harsh conditions. In addition, its small size makes it easy to install in cramped settings.
Working Principle
The BZX585-C12,135 is a single Zener diode, so it works on a simple principle. A Zener diode is a two-terminal, semiconductor device that has a heavily doped junction region with a thin, highly conductive layer of oxide forming the P-N junction. When the voltage applied to the diode exceeds the breakdown voltage of the junction, the diode begins to allow current to flow in the reverse direction.
This current creates a greater voltage drop across the diode than the forward bias voltage, so the diode continues to conduct current until the current drops to a safe level. This breakdown voltage varies according to the characteristics and power rating of the diode.
The BZX585-C12,135 has a breakdown voltage of 12.135V and a power dissipation of 500mW, so it is extremely well suited for many different applications.
Conclusion
The BZX585-C12,135 is a single Zener diode with a breakdown voltage of 12.135V and a power dissipation of 500mW. It is ideal for circuit protection, voltage regulation, and providing reference voltages in A/D and D/A converters. Its low forward voltage drop, broad temperature range, and small size make it suitable for use under harsh conditions and in cramped settings.
The specific data is subject to PDF, and the above content is for reference
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| BZX585B24 RSG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 24V 200MW SOD... |
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| BZX585-B3V3,135 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 3.3V 300MW SO... |
| BZX585-B5V6,115 | Nexperia USA... | 0.06 $ | 1000 | DIODE ZENER 5.6V 300MW SO... |
| BZX585B33 RKG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 33V 200MW SOD... |
| BZX585B36 RKG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 36V 200MW SOD... |
| BZX55F20-TAP | Vishay Semic... | 0.0 $ | 1000 | DIODE ZENER 20V 500MW DO3... |
| BZX55C22-TR | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 22V 500MW DO3... |
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| BZX55C3V6 A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 3.6V 500MW DO... |
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| BZX55B4V3-TR | Vishay Semic... | 0.02 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
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BZX585-C12,135 Datasheet/PDF