BZX585-C12,135 Allicdata Electronics
Allicdata Part #:

BZX585-C12,135-ND

Manufacturer Part#:

BZX585-C12,135

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 12V 300MW SOD523
More Detail: Zener Diode 12V 300mW ±5% Surface Mount SOD-523
DataSheet: BZX585-C12,135 datasheetBZX585-C12,135 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03461
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 8V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Description

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BZX585-C12,135 Application Field and Working Principle

The BZX585-C12,135 is a single Zener diode. It is typically used in circuit protection and voltage regulation applications. Its low forward voltage drop, broad temperature range, and small size make it ideal for a variety of applications including use with both digital and linear circuits.

Application Field

The BZX585-C12,135 is a single Zener diode with a breakdown voltage of 12.135V and a power dissipation of 500mW. It is widely used in many different circuit protection and voltage regulation applications such as providing over-voltage protection and providing a reference voltage for A/D and D/A converters. The low forward voltage drop and small size make it well suited for use as a shunt regulator in many different settings.

This diode is often used in automotive applications requiring reliable and durable components. The high temperature range and low forward voltage drop make it suitable for use under harsh conditions. In addition, its small size makes it easy to install in cramped settings.

Working Principle

The BZX585-C12,135 is a single Zener diode, so it works on a simple principle. A Zener diode is a two-terminal, semiconductor device that has a heavily doped junction region with a thin, highly conductive layer of oxide forming the P-N junction. When the voltage applied to the diode exceeds the breakdown voltage of the junction, the diode begins to allow current to flow in the reverse direction.

This current creates a greater voltage drop across the diode than the forward bias voltage, so the diode continues to conduct current until the current drops to a safe level. This breakdown voltage varies according to the characteristics and power rating of the diode.

The BZX585-C12,135 has a breakdown voltage of 12.135V and a power dissipation of 500mW, so it is extremely well suited for many different applications.

Conclusion

The BZX585-C12,135 is a single Zener diode with a breakdown voltage of 12.135V and a power dissipation of 500mW. It is ideal for circuit protection, voltage regulation, and providing reference voltages in A/D and D/A converters. Its low forward voltage drop, broad temperature range, and small size make it suitable for use under harsh conditions and in cramped settings.

The specific data is subject to PDF, and the above content is for reference

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