BZY55B33 RYG Allicdata Electronics
Allicdata Part #:

BZY55B33RYG-ND

Manufacturer Part#:

BZY55B33 RYG

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 33V 500MW 0805
More Detail: Zener Diode 33V 500mW ±2% Surface Mount 0805
DataSheet: BZY55B33 RYG datasheetBZY55B33 RYG Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01588
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 24V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Description

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The BZY55B33 RYG is a single Zener diode, which are used on many everyday electronics. The most common application of these diodes are for voltage regulation and surge protection, which is where the Zener breakdown voltage plays an important role. Zener diodes are formed when a metal oxide layer is placed across an N-type semiconductor material. When the breakdown voltage is reached, electrons from the depletion layer are knocked from one side to the other, forming a tunnel. This causes current to flow in an uncontrolled manner, and this increases the voltage across the diode until it reaches the Zener voltage.

Typically, these diodes have a Zener breakdown voltage in the range of 3.3V to 38V and have a maximum power dissipation rating of 0.5W. The advantage of using one of these diodes is that it can be used to provide a constant reference voltage, which is essential in many applications. In a voltage regulator, the Zener diode can be used to limit the output voltage of an adjustable regulator and to provide a safe voltage in the event of a surge. Another use of these diodes is in reverse polarity protection. By placing a Zener diode across the positive and negative terminals of a device, current flow can be limited to a safe voltage level, protecting the device from short circuiting.

The approach used to assemble the BZY55B33 RYG diode is a peak micro-hot technology. This method involves mounting a thermocouple at each end of the diode and then applying a precisely controlled high energy pulse to heat the diode. This, in turn, causes the diode material to melt and to form a junction. This process is known as hot carrier injection and is used to ensure that the Zener voltage is accurate across all temperature ranges. This method is also used to prevent false triggering, which can occur if the diode is exposed to large amounts of current during the operating temperature range.

The BZY55B33 RYG diode is designed to be suitable for a wide range of applications, from power line overvoltage protection to automotive applications. Its construction is designed to meet the stringent requirements of the automotive industry, so it is well-suited for use in high-current, low-power circuits. Its Zener breakdown voltage can be adjusted to meet the specific requirements of a particular application. In addition, it has a low forward voltage drop, allowing it to work in a wide range of devices.

Overall, the BZY55B33 RYG is a versatile single Zener diode that is suitable for a variety of applications. Its Zener breakdown voltage, peak micro-hot technology, and low forward voltage drop make it ideal for use in low-power, high-current circuits, such as those found in automotive electronics. Its structure ensures that it can provide a stable reference voltage over a wide range of temperatures, ensuring that your device is protected from overvoltage and false triggering. These features make it a great choice for your next electronics project.

The specific data is subject to PDF, and the above content is for reference

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