C157B Allicdata Electronics
Allicdata Part #:

C157B-ND

Manufacturer Part#:

C157B

Price: $ 50.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: THYRISTOR SCR 110A 200V TO-83
More Detail: SCR Standard Recovery
DataSheet: C157B datasheetC157B Datasheet/PDF
Quantity: 1000
30 +: $ 45.64100
Stock 1000Can Ship Immediately
$ 50.21
Specifications
Series: --
Packaging: --
Part Status: Active
Current - Non Rep. Surge 50, 60Hz (Itsm): --
SCR Type: Standard Recovery
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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Thyristors - SCRs offer a variety of advantages over traditional triode valves, such as high electrical current gain, fast switching speeds, high voltage blocking capability, and low turn-off power consumption. The C157B is a four-layer thyristor that incorporates a gate-turn-off thyristor (GTO) structure, which is based on a silicon-controlled rectifier (SCR) and provides reliable quiescent current capabilities, fast switching speeds, and low on-state voltages.

Application Fields of C157B

C157B is widely used in power electronics applications. The device is able to block high voltages, making it suitable for use with AC and DC power supplies. Its high switching speed and low turn-off power consumption make it an ideal choice for motor drive systems, variable speed drives, switch-mode power supplies, motor controllers, and other power control applications. The device is also suitable for use in resonant converter circuits and high-frequency applications.

Working Principle of C157B

The C157B device is based on a four-layer structure consisting of an anode, gate, transistor, and cathode. When a voltage is applied to the gate, a charge is created which brings the device into an on-state. The gate voltage controls the on-state current, allowing for precise control of the device’s switching action. In its on-state, the device can conduct high current, making it an ideal choice for power applications.

When the gate voltage is reduced, the device turns off and the current between the anode and cathode stops. The C157B device has a low turn-off power consumption. This means that it can be shut off quickly without requiring significant power to keep the device on.

The C157B device is also capable of self-driven turn-off. This means that the device will turn off by itself when its gate voltage drops below a certain level. This is a useful feature in applications that require reliable operation.

Advantages of C157B

The C157B device provides several advantages over traditional thyristors and triode valves. It has a high electrical current gain and high voltage blocking capability, making it suitable for AC and DC power supplies. It is capable of operating at fast switching speeds, making it an ideal choice for motor drive systems and other power control applications. It also has a low turn-off power consumption, ensuring reliable operation in all applications.

Conclusion

The C157B device is an excellent choice for a wide range of power electronics applications. It has a four-layer structure based on a gate-turn-off thyristor, offering reliable quiescent current capabilities, fast switching speeds, and low on-state voltages. Its high electrical current gain, fast switching speeds, high voltage blocking capability, and low turn-off power consumption make it an ideal choice for motor drive systems, variable speed drives, switch-mode power supplies, motor controllers, and other power

The specific data is subject to PDF, and the above content is for reference

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