C441N Allicdata Electronics
Allicdata Part #:

C441N-ND

Manufacturer Part#:

C441N

Price: $ 72.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: THYRISTOR DSC 800V 750A TO200AC
More Detail: SCR 800V 1175A Standard Recovery Chassis Mount Pre...
DataSheet: C441N datasheetC441N Datasheet/PDF
Quantity: 1000
30 +: $ 66.13550
Stock 1000Can Ship Immediately
$ 72.75
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Off State: 800V
Voltage - Gate Trigger (Vgt) (Max): 5V
Current - Gate Trigger (Igt) (Max): 125mA
Voltage - On State (Vtm) (Max): 2V
Current - On State (It (AV)) (Max): 750A
Current - On State (It (RMS)) (Max): 1175A
Current - Off State (Max): 35mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A, 11000A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: B-PUK (TO-200AC)
Supplier Device Package: Press-Pak (Pow-R-Disc)
Description

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Thyristors - SCRs

Thyristors are solid state switches that are widely used in power electronics applications. In particular, SCRs (Silicon Controlled Rectifiers) are widely utilized in industrial applications, as well as in consumer appliances such as power supplies, motor drives and waveform converters.

A C441N SCR is a type of three-terminal, four layer thyristor with a positive temperature coefficient of threshold voltage and a relatively low hold-off voltage (VBO). It is capable of controlling large amounts of current and power, with a low number of triggering pulses.

Application Field

C441N SCRs are used in a variety of applications, such as:

  • Overload protection of motors, generators and transformers
  • Switching of capacitive or inductive loads
  • Regulation of AC or pulse-width-modulated AC waveforms
  • DC switching applications
  • Phase controlled switch-mode power supplies

Working Principle

The C441N SCR is composed of four layers of alternating N and P type semiconductor material (hence the name, four-layer SCR). It has three terminals, labeled anode (A), gate (G) and cathode (K). When a positive voltage is applied to the anode and a negatively biased gate voltage is applied to the gate terminal, electrons can ‘tunnel’ through the PN junction and flow into the N region. This creates a conducting channel between the anode and cathode, allowing current to flow.

Once the gate voltage is removed, the thyristor reverts to a non-conductive state, exhibiting a blocking (or non-conducting) voltage. To resume the conduction process, the voltage drop across the thyristor must again be reversed.

The C441N SCR is designed to turn on when the voltage drop across it reaches a specific value, called the breakover voltage or conduction threshold. This value is typically 2V for this type of SCR. When the breakover voltage is exceeded, the internal resistance of the device decreases exponentially until it reaches a point where the current density is high enough to sustain conduction.

The current density of the C441N SCR depends on two factors: the anode-cathode voltage (VAK) and the gate current (IG). The current density is increased when the gate current is increased and/or the anode-cathode voltage is decreased. If the gate current is very high, the device will turn on even if the anode-cathode voltage is well below the breakover voltage. On the other hand, if the gate current is very low, the device will not turn on even if the voltage drop across it is high.

The C441N SCR can be used in a variety of applications where precise control of current or power is needed. It is typically used in applications that require biased switching and where the current or power must be switched in one direction only. It is also used in applications where triggering of the device must be repeated accurately.

The specific data is subject to PDF, and the above content is for reference

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