| Allicdata Part #: | C4D05120E-TR-ND |
| Manufacturer Part#: |
C4D05120E-TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Cree/Wolfspeed |
| Short Description: | DIODE SCHOTTKY 1.2KV 19A TO252-2 |
| More Detail: | Diode Silicon Carbide Schottky 1200V 19A (DC) Surf... |
| DataSheet: |  C4D05120E-TR Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | Z-Rec® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 1200V |
| Current - Average Rectified (Io): | 19A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 5A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0ns |
| Current - Reverse Leakage @ Vr: | 150µA @ 1200V |
| Capacitance @ Vr, F: | 390pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252-2 |
| Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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C4D05120E-TR is a part of the family of rectification diodes designed for use in many applications requiring high reliability, high power cycling, and low Reverse Leakage Current. The major benefits that this diode offers include its Industry-leading Maximum Forward Voltage Ratings and Maximum Reverse Leakage Current Ratings. It features an aluminum nitride ceramic substrate and an inherent low leakage current of less than 1 μA at all operating temperatures. Another major benefit of this diode is its superior thermal cycling ability, making it an ideal choice for high-switching rate, high-voltage systems.
Application
The C4D05120E-TR is ideal for high-power, high-voltage rectification applications and is particularly useful in the power supply area. It can be used for rectifying AC into DC for powering a variety of devices, such as telecoms and other high-power appliances. This diode is also used for battery and charger circuits, voltage clamping devices, and rectifiers for automotive and other low-voltage DC applications.Working Principle
The C4D05120E-TR is a rectification diode, which means it only allows current to flow in one direction. It is designed to allow the passage of current in the forward direction but to block reverse current flow in the opposite direction. When no voltage is applied, the diode is in a "reverse-biased" state, which effectively blocks any current flow. When a forward voltage is applied, current starts to flow through the diode towards the anode, providing the required rectification. The C4D05120E-TR features superior thermal cycling ability, which means it can survive many "hot-switching" applications. This makes it an ideal choice for high-switching rate, high-voltage systems. Its heavy copper coating and anodic oxide layer protect the chip from thermal breakdown, and its rugged construction ensures superior reliability when subjected to extreme environments. The C4D05120E-TR has a 10A operational maximum forward current and works at voltages up to 1200V peak. Its reverse leakage current is less than 1μA, making it an excellent choice for applications requiring a low-leakage current. Its low capacitance also means that it can reduce voltage switching noise, eliminating any ringing during rapid voltage transitions. Overall, the C4D05120E-TR is an excellent choice for high-power, high-voltage rectification applications. It offers superior power cycling performance and low reverse leakage current, making it an ideal choice for many rectifier applications. Its high thermal cycling ability ensures superior reliability in environments subjected to extreme conditions, while its low capacitance reduces voltage switching noise and eliminates ringing during voltage transitions.The specific data is subject to PDF, and the above content is for reference
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