C50M

Series:	--
Packaging:	--
Part Status:	Active
Current - Non Rep. Surge 50, 60Hz (Itsm):	--
SCR Type:	Standard Recovery
Operating Temperature:	--
Mounting Type:	--
Package / Case:	--
Supplier Device Package:	--

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Thyristors - SCRs

A silicon controlled rectifier (SCR) or thyristor belongs to a category of power semiconductor devices known as four-layer, or four-terminal, devices. They are closely related to the still more commonly known bipolar junction transistor (BJT), but unlike the BJT, the SCR is a unidirectional device. This means that current will only flow when the device is turned on in the forward direction. SCRs are often used in various applications such as control of motors and heating elements and are commonly used to convert alternating current (AC) to direct current (DC).

C50M application field and working principle

The C50M is a type of SCR with an on-state voltage drop as low as 75mV and a maximum off-state leakage current at 25°C of 1mA, making it an ideal choice for cost sensitive designs. Its maximum repetitive peak off-state voltage rating can reach up to 7.5kV and its maximum off-state limit current can reach 5A. This makes it suitable for use in a wide range of applications, including DC motor control, rectifiers, automotive and industrial control, LED lighting, and various types of power supplies.The C50M SCR is characterized by its four layers. The first layer is a PNPN structure and act as the gate or control terminal. The second layer is made up of two P regions, the anode and the cathode. When the gate is forward biased; current is passed from between the two P regions, thus turning the device on. The third layer is made up of the two N-type substrates which form the body terminal, or body of the SCR. The fourth layer is the P-type insulation layer and acts as a dielectric, separating the individual layers of the SCR.In operation, the C50M is first turned on through gate current which flows through the PNPN layer. This gate current is then amplified by the N-type substrates and passes current across the anode and cathode of the device. This allows current to flow from the anode to the cathode. As the current passes through, a small voltage drop is developed across the device, and this voltage drop is known as the on-state voltage. The on-state voltage is a key parameter used to determine the efficiency of a power switch.Once the current reaches a certain level, it is controlled by the body terminal. The P region of the body terminal serves as an additional threshold level, thus limiting the maximum current that can flow through the device. When the current falls below this threshold, the device can be turned off through reverse biased gate current.The C50M also has several safety features, such as a current surge protection diode which is built into the device. This protection diode helps to protect the device from short circuit conditions. Additionally, the C50M is also protected from overvoltage conditions by its low threshold voltage. The C50M is rated for use up to 125°C and is designed for reliability over temperature and other environmental conditions. Overall, the C50M SCR is an ideal choice for designs that require a low on-state voltage drop, reliable performance over temperature, and excellent current load carrying capacity. It is especially well suited to applications where cost is a major consideration.

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