CA12000156 Allicdata Electronics
Allicdata Part #:

CA12000156-ND

Manufacturer Part#:

CA12000156

Price: $ 47.79
Product Category:

Uncategorized

Manufacturer: ITT Cannon, LLC
Short Description: CIRCULAR
More Detail: N/A
DataSheet: CA12000156 datasheetCA12000156 Datasheet/PDF
Quantity: 1000
500 +: $ 43.43980
Stock 1000Can Ship Immediately
$ 47.79
Specifications
Series: *
Part Status: Active
Description

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The CA12000156 device is a type of semiconductor component that can be used in a variety of applications across diverse industries. It is typically used in applications that require high levels of power efficiency, such as telecommunications, automotive, medical, and aerospace applications. The CA12000156 can operate at a wide range of voltages, making it versatile enough for multiple applications. The typical working voltage range for this device is 4.5V to 25V.

The CA12000156 is an integrated circuit MOSFET (large-scale integrated circuit metal-oxide semiconductor field-effect transistor) designed in a family of vertical MOSFETs. This device was designed for use in low-voltage, high-efficiency power control applications because of its low power consumption and high power density. Its low-voltage, high-current operation allows designers to reduce the size of the transistor packages for even more efficiency.

The CA12000156 provides high temperature stability, low on-resistance, and low gate charge for increased performance and extended battery life. Its low-voltage rating also helps reduce the component\'s power dissipation requirements, making it ideal for applications running on battery power.

The CA12000156 works by controlling the distribution of electrons through a channel formed in the substrate. By adjusting the voltage level at the gate, the negative resistance region is shifted. This shift in the negative resistance region causes the device to switch from its normally conducting state to a non-conducting state, or vice-versa. This switching mechanism is commonly referred to as the MOSFET\'s “threshold voltage” – the level at which the device switches from a low to a high impedance state.

The device\'s working principle is based on the principles of Physics 101. When a voltage is applied to either electrode of the MOSFET, electrons will travel in one direction from the source side to the drain side. In the case of an n-channel MOSFET, the electrons will be drawn from the source to the drain side of the device when the gate voltage is negative (that is to say, voltage less than zero). When the voltage applied to the gate is positive, then the flow of electrons is reversed and the MOSFET is switched from a low to a high impedance state.

The CA12000156 is a versatile device with applications in a wide range of industries. It can be used to provide voltage control in automotive, medical, and aerospace applications, or to power control and switching in telecommunications and other industries. Its low-voltage, high-efficiency design also makes it an ideal choice for applications that require low power consumption and high power density.

The specific data is subject to PDF, and the above content is for reference

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