CA3083MZ96

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	5 NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 50mA, 3V
Power - Max:	500mW
Frequency - Transition:	450MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	16-SOIC
Base Part Number:	CA3083

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Introduction

CA3083MZ96 is a type of Bipolar Junction Transistor Array (BJT Array). It is a 10-stage medium power PNP transistor array designed for general purpose applications. This transistor array is designed and manufactured with high-speed, low power, low noise, applications specific to digital control and switching. The device also provides superior performance in a variety of linear and digital applications in industrial, communication and consumer products.

Features

The CA3083MZ96 BJT Array provides many features such as high voltage performance and low power consumption. Its PNP transistors have a 100 volt voltage rating, which enables them to be used in a wide range of applications. In addition, the device operates at a low power, making it ideal for low-power applications such as AC switching and digital control. The transistors also offer excellent thermal stability, resulting in superior performance in digitally-accelerated high-frequency switching systems. With a maximum current rating of 100mA, the system can support various applications with strong current requirements.

Application Field and Working Principle

The CA3083MZ96 BJT Array can be used in a variety of applications in both the analog and digital domain, such as audio amplifiers, digital switching systems, AC switching, digital voice switches, and general purpose linear applications. Its PNP transistor array also supports high-voltage and high-frequency applications, such as AC and DC switching, voltage regulators, SMPS applications, and automotive electronics. The CA3083MZ96 BJT Array operates using the same general operation principles as any other BJT transistor. It consists of two identical transistor regions separated by a thin base region, with the two regions referred to as collector, base, and emitter. The base region acts as a gate, controlling the flow of electrons between the collector and emitter. When a voltage is applied to the base of the transistor, it causes current to flow from the collector to the emitter. This current flow is also referred to as gain, and the magnitude of the current is referred to as the transistor\'s dc current gain, or hFE. The maximum gain value of the CA3083MZ96 BJT Array is between 80 and 300. This current gain value is dependent on the current and voltage supplied to the base of the transistor, and will vary based on the amount of current drawn by the load. The power dissipation of the CA3083MZ96 BJT Array is 0.2 Watts, making it an ideal choice for applications with limited power requirements.

Conclusion

The CA3083MZ96 BJT Array is a versatile 10-stage PNP transistor array that can be used in a variety of linear and digital applications. It provides high voltage performance and excellent thermal stability, enabling it to be used in high-frequency circuits. It offers a low power consumption rate and maximum current rating of 100mA, making it suitable for applications with strong current requirements. The CA3083MZ96 BJT Array is therefore the ideal choice for industrial, communication and consumer product applications.

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