Allicdata Part #: | CBAT54STR-ND |
Manufacturer Part#: |
CBAT54S TR |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ARRAY SCHOTTKY 30V SOT23 |
More Detail: | Diode Array 1 Pair Series Connection Schottky 30V ... |
DataSheet: | CBAT54S TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14057 |
6000 +: | $ 0.13151 |
15000 +: | $ 0.12243 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io) (per Diode): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 5ns |
Current - Reverse Leakage @ Vr: | 2µA @ 25V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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Diodes-Rectifiers-Arrays (DRA) have been a popular topic in the electrical engineering field for decades. Over the years, new technologies and device architectures have been developed to ever-increasing levels of efficiency, reliability, and power density. One such example is the CBAT54S TR (through-rectified) application field and working principle.
The CBAT54S TR is a single primary MOSFET-based dual-gate rectifier/array that provides high-current rectification, along with high-speed switching and low-voltage operation. It contains two MOSFETs, one of which is the primary driver, which is connected directly to the external load, providing the necessary energy to power the entire system. The other MOSFET acts as a gate generator, which controls the current through the primary driver MOSFET. The resulting controlled current is then either rectified or converted to a single-ended PWM (pulse width modulation) signal, which is then passed to the load.
The CBAT54S TR is often used in power converters and motor control applications due to its high current rectification and switching capabilities. Its high-speed switching also enables better performance in high-frequency/high-voltage applications. Additionally, its low-voltage operation results in significantly reduced power losses during switching, making it a key choice in applications that involve low power dissipation or low supply voltages.
The CBAT54S TR is able to operate over a wide range of input voltage and output power levels. In order to ensure high power conversion efficiency, the device’s output voltage is regulated using a constant-on-time (COT) control method. This control method adjusts the output power according to the input voltage to ensure that the desired output power is maintained without wastage.
The MOSFETs used in the CBAT54S TR are usually constructed with SiGe (Silicon-Germanium) material, which provides better switching speeds and higher power densities than regular MOSFETs. Additionally, by employing multiple MOSFETs, the device can provide significantly higher current outputs than a single MOSFET. This makes it well-suited for driving high-current loads such as motors or power conversion stages.
The CBAT54S TR is an excellent choice for a variety of dynamic power conversion applications, ranging from automotive electrical systems to industrial motor control systems. With its high current rectification, high speed switching, and low-voltage operation, the CBAT54S TR can provide significant power conversion efficiency and power density. This makes it an ideal solution for many applications that require both high efficiency and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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