CD411899B

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Diode Configuration:	1 Pair Series Connection
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1800V
Current - Average Rectified (Io) (per Diode):	100A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	10mA @ 1800V
Mounting Type:	Chassis Mount
Package / Case:	POW-R-BLOK™ Module
Supplier Device Package:	POW-R-BLOK™ Module

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CD411899B is a switching diode array device. It is an array of 1-of-4 configuration (1N4, 2N2) diodes designed for use in high-speed switching applications, such as power supply converters and high-speed logic circuits, where a low forward voltage is desired. This diode array is available in a low-profile, small-size package and is compliant with RoHS standard.The CD411899B is based on the diode element of Schottky barrier construction with the depletion region formed by a thin layer of metal-oxide semiconductor and a thin region of heavily doped semiconductor. By adjusting the resistor, the switching threshold and maximum current capacity of the device can be adjusted. Its structural parameters also determine its performance characteristics, such as forward voltage, reverse current and junction capacitance. On the whole, in terms of switching speed and low forward voltage, the CD411899B is significantly improved from previous generations of diode devices. ApplicationsCD411899B is suitable for high-speed switching applications and power supply converters, as well as high-speed logic circuits. Just as with any other kind of switching diode arrays, this type device has the potential of replacing multiple single diodes. In recent years, diodes switching applications have become increasingly popular because it has been proven to be reliable and provide many benefits.For examples, the use of switching diode arrays in power supplies helps minimize losses in the power converter, and this is one of the main benefits of using the CD411899B. Furthermore, a switching diode array can improve reliability as it can be replaced in a very cost-effective manner. In addition, because of its low forward voltage, the device can reduce load dissipation and increase power efficiency.Working PrincipleWhen a voltage is applied to the device, the electric field charges the depletion region and the electric charge begins to spread gradually until the external voltage is greater than the built-in potential barrier. This built-in potential barrier value is determined by the dopant concentration in the depletion region and by the crystal orientation of the material. The larger the dopant concentration, the higher the potential barrier and the slower the charge moves. The electric field will be shape such that the electric charge on the region edge is large enough to reach the external voltage, which is greater than the potential barrier.When the electric charge meets its opposite at the base point of the electric field, the diode begins its conduction process. The electric current at this point is allowed to pass through a diode, causing a current in the external circuit. This current flow will cause a voltage drop across the diode due to its internal resistance and a power loss in the external circuit. In conclusion, the CD411899B switching diode array is an excellent choice for high-speed switching applications and power supply converters. It has been developed for low-profile, small-size applications and is compliant with RoHS standards. Its low forward voltage and improved switching speeds makes it an ideal choice for high-speed logic circuits. Its working principle relies on its structural parameters, such as dopant concentration and crystal orientation, and its ability to adjust the electric field which is responsible for current passing through the diode.

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