CDF7621-000 Allicdata Electronics
Allicdata Part #:

863-1211-ND

Manufacturer Part#:

CDF7621-000

Price: $ 1.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Skyworks Solutions Inc.
Short Description: DIODE SCHOTTKY 2V CHIP
More Detail: RF Diode Schottky - Single 2V Chip
DataSheet: CDF7621-000 datasheetCDF7621-000 Datasheet/PDF
Quantity: 16400
100 +: $ 1.58477
300 +: $ 1.50349
500 +: $ 1.34908
1000 +: $ 1.13778
2500 +: $ 1.08089
5000 +: $ 1.04026
Stock 16400Can Ship Immediately
$ 1.76
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 2V
Capacitance @ Vr, F: --
Resistance @ If, F: --
Operating Temperature: --
Package / Case: Die
Supplier Device Package: Chip
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CDF7621-000 is a high-performance RF Diode designed for various high frequency and microwave applications. It is ideal for use as a switch, shutoff, or gain control device in a wide range of power and signal applications. The diode features high frequency and power performance, as well as low noise and low insertion loss. The integrated design of the diode offers a compact and reliable solution for a host of applications.

The RF Diode works by using a reverse biased junction which makes it highly efficient in the generation of its noise figures. There is no switching current feed through and it relies on capacitive reactance in order to keep its dynamic resistance low. The diode is suitable for use with frequencies ranging from hundreds of kHz to tens of GHz. Its input and output impedances are matched to 50 ohms, allowing for good transfer of power.

The main application of the CDF7621-000 is in the power amplification of broadband signals, such as those used for satellite communications or cell phone transmission. The diode is also well suited for use as a high-power switch or attenuator in various electronic systems. Its low noise, low insertion loss and bandwidth makes it ideal for use in communication systems and aerospace applications.

The primary working principle of the CDF7621-000 involves the generation of its noise figure which is accomplished through the use of a reverse biased junction. The junction produces a signal that is sent back to the input of the diode which causes a signal to be generated at the output. This signal is then compared to the signal at the input, and the difference in amplitude is used to measure the total noise figure of the diode. The implementation of a reverse biased junction allows for a high efficiency in the generation of noise figures.

The RF Diode is used in a range of applications including broadband signal power amplification, satellite communication, cell phone transmission, and various electronic systems. The diode\'s high power and frequency performance, low noise and low insertion loss make it ideal for these applications. The diode is also used as a gain control device, low power switch or attenuator. In addition, its compact design lends itself to applications that require a high degree of compactness and reliability.

In summary, the CDF7621-000 is a high performance RF Diode designed for various applications. It is highly efficient at generating noise figures and offers excellent frequency, power and switch performance. Its low noise and low insertion loss make it suitable for a range of applications including power amplification of broadband signals, low power switch, attenuator and gain control, as well as cell phone transmission and satellite communications systems.

The specific data is subject to PDF, and the above content is for reference

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