CDZVT2R5.1B Discrete Semiconductor Products |
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Allicdata Part #: | CDZVT2R5.1BTR-ND |
Manufacturer Part#: |
CDZVT2R5.1B |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 5.1V 100MW VMN2M |
More Detail: | Zener Diode 5.1V 100mW Surface Mount VMN2M |
DataSheet: | CDZVT2R5.1B Datasheet/PDF |
Quantity: | 8000 |
8000 +: | $ 0.02356 |
16000 +: | $ 0.02003 |
24000 +: | $ 0.01885 |
56000 +: | $ 0.01767 |
200000 +: | $ 0.01532 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | -- |
Power - Max: | 100mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 1.5V |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | VMN2M |
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CDZVT2R5.1B Application Field and Working Principle
CDZVT2R5.1B is a single, low-power Zener diode, typically used in voltage regulation, regenerative feedback and over-voltage protection applications. It offers low leakage current and tight limits for temperature coefficient. These diodes are manufactured in a small, SOT-23 package and are easy to assemble. They also provide excellent electrical and mechanical stability.
Construction and Working Principle of CDZVT2R5.1B
CDZVT2R5.1B consists of a thin, lightly doped N-type material (cathode) epitaxially grown onto a heavily doped P-type substrate (anode). This semiconductor structure makes the diode reverse-biased until the voltage is high enough to create a forward-biased current flow. At this break-over voltage, the CDZVT2R5.1B produces a good conducting path between the negative and positive terminals. It is an ideal diode for low-power usage due to its low current leakage.
The rated peak repetitive reverse voltage of CDZVT2R5.1B is 2.5V. Its forward voltage is 0.8V with a low maximum forward voltage drop of 0.4V. The maximum substrate current capability is 100mA, with a leakage current of a maximum of 1mA. It has a power dissipation rating of 255mW and operates in temperatures ranging from -65°C to +150°C.
Applications of CDZVT2R5.1B
CDZVT2R5.1B is designed for use in a wide range of general-purpose applications, including:
- Voltage regulation and over-voltage protection.
- Feedback and clamping circuits.
- Regenerative feedback circuits.
- AC-line monitoring.
- Surge protection.
- Charge pump circuits.
- High-power converters.
CDZVT2R5.1B is available in a range of standard, medium and low-power versions, making it suitable for use in many different types of application, from low-power logic applications to high-power power converters.
Advantages of CDZVT2R5.1B
The main advantages of CDZVT2R5.1B are its low cost, small size and excellent electrical and mechanical stability, which makes it ideal for use in a wide range of general-purpose applications. The diode also offers good thermal and electrical performance and is highly reliable. Furthermore, the low current leakage makes it suitable for low-power usage, making it an ideal choice for voltage regulation, over-voltage protection, and many other applications.
Conclusion
CDZVT2R5.1B is a single, low-power Zener diode manufactured in a small, SOT-23 package. It is typically used in voltage regulation, regenerative feedback and over-voltage protection applications, as well as for AC-line monitoring and surge protection. Owing to its excellent electrical and mechanical stability, lowpower consumption and low current leakage, it is ideal for a wide range of general-purpose applications.
The specific data is subject to PDF, and the above content is for reference
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