CJD13003 TR13 Allicdata Electronics
Allicdata Part #:

CJD13003TR13-TR-ND

Manufacturer Part#:

CJD13003 TR13

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 700V 1.5A DPAK
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 1.56W ...
DataSheet: CJD13003 TR13 datasheetCJD13003 TR13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.45928
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Power - Max: 1.56W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Description

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CJD13003 TR13 is a single bipolar junction transistor (BJT) of the advanced insulated-gate bipolar transistor (IGBT) family. It is highly efficient in its operating speed, provides maximum operating temperature and temperature coefficient, and is a reliable device for applications from DC to 200 Hz.

The CJD13003 TR13 features a pnp interconnected collector, base, and emitter, which provides a current gain of approximately 200-300. The collector-emitter voltage is typically between 25V and 30V. Additionally, the on-voltage across the emitter-base junction is typically between 0.7V and 1.2V. The low output capacitance and the very low reverse leakage limit the device loading and prevent any system DC interference.

The CJD13003 TR13 is ideal for motor control, inverter, and other frequency-controlled applications, especially in applications that require high switching capacities, like bridge rectifiers and half-bridge circuits. The CJD13003 TR13’s low forward voltage drop ensures high efficiency and increases its power output. Its high-performance and protection features mean increased safety and reliability in any type of switching circuit.

The CJD13003 TR13 working principle relies on the electron flow from the collector to the base and from the base to the emitter. When the base-emitter voltage is applied, the electrons move from the base to the emitter, creating a current flow between the collector and the emitter. This inverts the electron flow and creates an inverted voltage between the collector and the emitter. This allows current to flow between the collector and emitter, and simultaneously, the device conducts while effecting current gain.

By regulating the base-emitter voltage, the current gain can be regulated, allowing the device to be used in multiple switching applications. Additionally, it also offers maximum operating temperature and temperature coefficient to ensure operation reliability in all types of circuit designs, such as pulse-width modulation (PWM) circuits, voltage regulators, and DC-DC converters.

The CJD13003 TR13 is a versatile device, and its low voltage drop, temperature coefficients, and performance features, along with its high reliability and safety features, make it ideal for a wide range of applications. As conventional BJT switching is slowly being phased out, this recent IGBT device provides a perfect replacement and more reliable results in precision circuits.

The specific data is subject to PDF, and the above content is for reference

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