| Allicdata Part #: | CLH06(TE16LQ)-ND |
| Manufacturer Part#: |
CLH06(TE16L,Q) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | DIODE GEN PURP 300V 5A L-FLAT |
| More Detail: | Diode Standard 300V 5A (DC) Surface Mount L-FLAT™ ... |
| DataSheet: |  CLH06(TE16L,Q) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 300V |
| Current - Average Rectified (Io): | 5A (DC) |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | L-FLAT™ |
| Supplier Device Package: | L-FLAT™ (4x5.5) |
| Operating Temperature - Junction: | -- |
Description
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.The CLH06(TE16L, Q) rectifier is a type of single diode that is a valuable tool in a variety of different application fields. It has a variety of features and dimensions that make it applicable in different situations, including low profile and superior thermal performance.
This type of diode is used in applications that require a low forward voltage drop, a relatively low reverse voltage, and superior thermal performance. It is also useful in applications that require a high power dissipation. A typical application of this device is at the rectification point of DC-DC and high frequency switching regulators.
The CLH06(TE16L,Q) rectifier diode is a low profile diode that is built on a glass epoxy substrate. Its electrical characteristics include a forward current of up to 4.6 amps and a maximum reverse voltage of 6 volts. The capacitance, available in various configurations, is from 0.3 to 1 nF. It has a distinctive short pulse triggering time of 5 ns and a low reverse leakage current of 20 nA.
The CLH06(TE16L,Q) rectifier works by using the PN junction between the two semiconductor materials, known as diffusion. When a bias voltage is applied, the majority carriers will be forced to the opposite sides of the junction, creating an electric field. The electric field then gives rise to an electric potential barrier and it is this barrier that prevents the majority carriers from crossing the junction in the opposite direction. As a result, holes are prevented from entering the N-doped side and electrons are prevented from entering the P-doped side, creating a diode rectifying effect.
This diode is a valuable tool for various applications due to its superior thermal performance, low forward voltage drop, and low reverse voltage. These features make it an ideal choice for DC-DC and high frequency switching regulator applications. Additionally, its low capacitance and short triggering time allow for a faster response time when switching, thereby increasing efficiency.
The specific data is subject to PDF, and the above content is for reference
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