CM200DY-24A

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The CM200DY-24A IGBT Module is a high-performance transistor that has found wide application in various fields as a result of its versatile working principle. It is part of a family of high-speed switching devices that combines current and voltage control to enable fast switching between two terminals.

The CM200DY-24A is designed to operate with a minimum switching time of 0.8 microseconds, giving it the highest level of reliability and enabling it to operate in demanding conditions. Its high switching frequency also makes it suitable for high performance applications where speed is important. The module\'s low on-resistance ensures that it is able to deliver high power with a high degree of efficiency, making it ideal for high power and high current applications.

The CM200DY-24A is a medium-voltage IGBT module, with a typical VCE rating of 600V and an operating temperature range of -55°C to +125°C. Its rated collector-emitter breakdown voltage is 800V, and its collector current rating is 65A. It has an absolute maximum voltage rating of 900V, a maximumgate-emitter voltage of 20V, a maximum collector-emitter voltage of 850V, and a maximum storage temperature of +150°C. The device is encapsulated in an aluminum nitride ceramic package and is RoHS compliant.

The main advantage of the CM200DY-24A is its low on-resistance, which gives it very low power loss during switching operations. This enables the device to be used in applications where high power and high current are needed, such as switching in renewable energy, and inverters in automotive systems. The module also features a high IGT (Gate Trigger Current) which allows the device to be triggered quickly and reliably, reducing switching losses. Additionally, the module’s low saturation voltage enables it to be operated in high-frequency applications without experiencing difficulty with high-frequency transients.

The CM200DY-24A is also highly reliable, having been tested for a total of up to 100,000 cycles under continuous flow. This means that it can be operated for extended periods of time without the risk of failure, making it suitable for many types of applications.

The working principle of the CM200DY-24A IGBT module is similar to that of all other IGBTs. It consists of two power transistors – the collector-emitter path and the gate-emitter path – which are each conduction-controlled. When an electric current is applied to the gate-emitter path, the transistor turns on and supplies an electric current to the collector-emitter path. The type, polarity and amount of current that is supplied depends on the voltage applied at the gate-emitter path, thus allowing the module to be used as a switch.

The CM200DY-24A IGBT module is a high-performance switching device that is versatile and reliable, making it ideal for many types of high-power and high-current applications. Its low on-resistance and high IGT enable it to deliver efficient power and switch quickly and reliably, making it suitable for a wide range of applications such as switching in renewable energy and inverters in automotive systems.

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