CM300DY-12NF Allicdata Electronics
Allicdata Part #:

835-1014-ND

Manufacturer Part#:

CM300DY-12NF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD DUAL 600V 300A NF SER
More Detail: IGBT Module Half Bridge 600V 300A 780W Chassis Mo...
DataSheet: CM300DY-12NF datasheetCM300DY-12NF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: IGBTMOD™
Part Status: Discontinued at Digi-Key
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 300A
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 45nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The CM300DY-12NF is a high-power insulated gate bipolar transistor module that is used in voltage range 600 V/300 A. It is classified as a transistor IGBT module, a type of power semiconductor module. It works by using both the features of a bipolar junction transistor, and an insulated gate field-effect transistor. This combination allows for an efficient and robust module for many applications.

The CM300DY-12NF has various applications such as motor control, welding machines, solar inverters, and general switching applications. In the consumer electronics industries, CM300DY-12NF is also used for LED drivers, and for high-efficiency energy conversion. Other than that, the CM300DY-12NF can also be used for various industrial applications, including AC and DC motor controllers, frequency converters, rectifiers, and dynamic brakes.

The construction of the CM300DY-12NF module includes an Insulated Gate Bipolar Transistor (IGBT), an integrated diode and an ultrafast protection diode, all encapsulated in a ceramic casing. This provides complete electrical and thermal isolation between the transistor switch, the heat sink, and other external components. As an IGBT module, the CM300DY-12NF is also particularly known for its high efficiency, low noise, low EMI, and low distortion.

The working principle of the CM300DY-12NF involves the use of an insulated gate field-effect transistor and a bipolar junction transistor. The insulated gate FET is used to control the current flowing from the collector to the emitter of the bipolar junction transistor, thus providing the switching action. When the gate voltage is applied to the output of the insulated gate FET, current starts flowing in the transistor, resulting in a lower resistance and higher current. This increased current is translated into voltage and power at the output, allowing for the module to switch at various voltage and power levels.

The CM300DY-12NF module is also known for its high power dissipation capabilities. The module has a junction temperature rating of 150 C and can handle peak currents up to 300 A with a surge current of up to 600 A. It also has a power dissipation of up to 1.2 kW and can operate across a wide voltage range of 600V.

In conclusion, the CM300DY-12NF module is a high-power insulated gate bipolar transistor module that is used in voltage range 600 V/300 A. It has various applications such as motor control, welding machines, solar inverters, and general switching applications. It is constructed of an Insulated Gate Bipolar Transistor, an integrated diode and an ultrafast protection diode and works by using both the features of a bipolar junction transistor and an insulated gate FET. It is also known for its high power dissipation capabilities, high efficiency, low noise, low EMI, and low distortion.

The specific data is subject to PDF, and the above content is for reference

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