Allicdata Part #: | 835-1018-ND |
Manufacturer Part#: |
CM400DY-24A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD DUAL 1200V 400A A SER |
More Detail: | IGBT Module Half Bridge 1200V 400A 2710W Chassis ... |
DataSheet: | CM400DY-24A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 400A |
Power - Max: | 2710W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 400A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 70nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CM400DY-24A is a Voltage and Current Insulated Gate Bipolar Transistor (IGBT) Module that is most suitable for applications in power electronics such as motor drives, uninterruptible power supplies, solar inverter, and UPS systems in industrial loads. The module provides both current and voltage insulation in a very small package size, making it an ideal solution for a wide range of applications. It has the capability to withstand high voltages and currents, making it suitable for a variety of circuits such as motor drives, UPS systems and solar inverter applications.
The IGBT Manganese Oxide (MnO2) layers of the CM400DY-24A modules are deposited on a ceramic substrate that is about 0.4mm in thickness. This layer possesses a certain level of enhanced conductivity as compared to other insulated gate bipolar transistors (IGBTs). In order to improve the functionality of the IGBTs, the layers are further treated with Ethyl Vinyl Ether (EVE), an organic vapor that increases the quality of the IGBTs with respect to the current-voltage handling capabilities.
The CM400DY-24A IGBT Module is composed of two insulated gate bipolar transistors (IGBTs) connected in an anti-parallel configuration. Each IGBT is internally protected with a parallel connected Diode. The module has several features such as capacitor levelling circuit, output voltage sensing, over-voltage protection and also a shut-down function. It has a low on-state voltage drop, high efficiency and low power dissipation.
The working principle of the CM400DY-24A IGBT Module is based on the principle of charging and discharging of electrons inside a device, which is known as the PN Junction. The PN Junction consists of two types of semiconductors, P and N, which are joined together at the same junction. When a voltage is applied across the two semiconductors, charges in the P-type semiconductor will be repelled and charges in the N-type semiconductor will be attracted, thus creating an electric field between the two terminals.
The CM400DY-24A IGBT Module is most suitable for applications in power electronics such as motor drives, uninterruptible power supplies, solar inverter, and UPS systems in industrial loads. Due to its high current and voltage insulation characteristics, the CM400DY-24A is the most suitable choice for high-power applications that require both current and voltage insulation in a small package size. It is also suitable for a variety of other applications such as voltage conversion, motor control and switching applications.
The specific data is subject to PDF, and the above content is for reference
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