CMLSH-4 TR

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The CMLSH-4 TR is a rectifier diode array designed for fast switching and low-capacitance clamped types and is suitable for applications such as overvoltage protection, RF and ESD protection, and voltage clamping. This device features very low dynamic resistance (Rdyn) and virtual open circuit transition time of up to 10ns, making it suitable for high-speed communication lines. In addition, its low-capacitance design minimizes crosstalk and signal reflection through coupled lines in high-speed applications. This device is rated for 600W at 1A (Tcs = 25°C) and can handle more current if its junction temperature is kept low.

The CMLSH-4 TR is composed of two rows of 4 through-hole rectifier diodes. This device has an open body design, with the lower row of diodes being sealed in a moisture-resistant plastic housing. The upper row is exposed, allowing them to dissipate heat quickly. The diodes are connected in parallel, allowing for both low voltage and high current applications. The central terminal of the lower row is connected to the positive side of the power supply, while the central terminal of the upper row is connected to the negative side.

The working principle of the CMLSH-4 TR is similar to that of any other rectifier diode array. The basic function of the device is to allow current to pass in only one direction while blocking it in the opposite direction. When a voltage is applied to its corresponding terminals, current can pulse through the device. The voltage across the upper row of diodes becomes the forward voltage drop and the current passes through the lower row of diodes as the return current.

The CMLSH-4 TR also features a low capacitance design. This is achieved by spacing the rectifier diodes apart and incorporating vias, which help to reduce the parasitic capacitance. By reducing the parasitic capacitance, the CMLSH-4 TR can handle higher frequencies without the risk of signal reflection through coupled lines in high-speed applications.

The CMLSH-4 TR is an excellent choice for overvoltage protection, RF and ESD protection, and voltage clamping. Its excellent characteristics, such as low dynamic resistance and low transition time, make it suitable for high-speed communication lines. Its low-capacitance design also helps to reduce crosstalk and signal reflection. With its open body design, this device is designed to dissipate heat quickly, making it suitable for applications that require high power ratings.

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