CMNT3906E TR Allicdata Electronics
Allicdata Part #:

CMNT3906ETR-ND

Manufacturer Part#:

CMNT3906E TR

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP 60V 0.2A SOT953
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 250m...
DataSheet: CMNT3906E TR datasheetCMNT3906E TR Datasheet/PDF
Quantity: 1000
8000 +: $ 0.09669
16000 +: $ 0.09001
24000 +: $ 0.08891
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-953
Supplier Device Package: SOT-953
Description

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The CMNT3906E TR is a single-transistor, bipolar junction transistor (BJT) designed find applications with high-density assembly and surface-mount technology (SMT). The device is composed of two diodes joined to each other by a common semiconductor region, known as the collector and base regions. The collector region acts as an anode, and the base acts as a cathode.

The CMNT3906E TR operates with an on/off switching and amplification conditions. The principle of operation is based on the injective current flow between the two layers when a forward bias voltage is applied on the collector-base junction. The current injection and resulting conduction are due to the high levels of minority carriers in the base region, which produces an inversion layer.

The CMNT3906E TR can be used in various applications, such as power management systems, lighting control applications, small-signal processing, analog amplifiers, and high-power switching circuits. It is also used to interface logic levels, amplify signals and split AC/DC power supplies. The CMNT3906E TR has an effective range of 15V to 40V and a maximum current rating of 600mA.

In addition to the on/off switching and amplification functioning which is the core of its operation, CMNT3906E TR is also designed for fast switching speed, high current gain, high breakdown voltage and low noise operation. The device is fabricated using planar technology and the use of protective coatings to attain high levels of reliability and durability.

The fast switching speed of the CMNT3906E TR is possible due to its collector-base junction, as well as its ability to switch from off-state to on-state quickly. The high current gain is due to its collector current capacity, which has a multiplier effect on the level of output transistors. The high breakdown voltage is achieved through an increase of avalanching electrons and holes, which produce an avalanche breakdown. Finally, the low level of noise operation is possible due to the use of the avalanche effect, which limits the current noise to nearly zero.

The CMNT3906E TR is designed for high temperature operation, making it ideal for power management and switching applications. Its usage is further extended due to the wide operating temperature range of -50°C to +200°C and a low collector-emitter saturation voltage of 0.2V minimum. The device is also capable of providing high ratings in terms of current surge, and is capable of withstanding high transient loads.

In conclusion, the CMNT3906E TR is an ideal device for surface mount applications that require fast switching speeds, high current gain, high breakdown voltage and low noise operation. Its versatile design and its ability to work efficiently at high temperature conditions makes it very well suited for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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