Allicdata Part #: | CMOSH-3BK-ND |
Manufacturer Part#: |
CMOSH-3 BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE SCHOTTKY 30V 100MA SOD523 |
More Detail: | Diode Schottky 30V 100mA Surface Mount SOD-523 |
DataSheet: | CMOSH-3 BK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 5ns |
Current - Reverse Leakage @ Vr: | 500nA @ 25V |
Capacitance @ Vr, F: | 7pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes are semiconductor elements that allow unidirectional current flow and are among the most basic elements in electronic engineering. The single diode, or rectifier, is a very simple, readily available and inexpensive diode, designed to provide a bi-directional flow of power. When dealing with high-current loads, the single rectifier is often preferred due to its cost-effectiveness and simplicity. The CMOSH-3 BK is a single rectifier that is available in both Throughhole and surface mount packages. This device utilizes a very efficient single-point reverse biased avalanche rectifier and is designed for high current applications.
The CMOSH-3 BK has been designed specifically for use in the automotive, industrial and telecommunications industries. Its low forward voltage drop is ideal for supplying high current loads in a wide range of applications such as motor control, electromechanical power supplies, cell towers, battery chargers and UPS systems. This device also features a wide operating temperature range of -55°C to +150°C and is rated to handle peak forward current of up to 6 A. In addition, the device has a high surge current capabilities, excellent reverse breakdown voltage and low thermal resistance.
The electronic circuit symbol for a single rectifier is shown below. It consists of anode, cathode and gate. The anode is connected to the positive terminal of the power supply, while the cathode is connected to the negative terminal. The gate is the control terminal of the diode and is generally connected to a switching circuit. When a forward voltage is applied to the anode, current passes through the diode. When the voltage is reversed, the diode will not allow current to pass.
The CMOSH-3 BK is designed to offer low forward voltage drop and high reverse leakage. Its avalanche characteristics and low forward voltage drop help to eliminate hot-spots, reduce power losses and increase device efficiency. The avalanche voltage of the CMOSH-3 BK is lower than the normal diode voltage and this helps to extend the life of the device as well as reduce power losses. The device also features a higher doping concentration in its semiconductor layer, which increases the device’s ability to control the switching current.
The device also features a short recovery time. This enables the device to recover quickly from reverse bias condition and helps to reduce switching delays. The CMOSH-3 BK also has a higher reverse breakdown voltage which increases its surge current capability and helps to prevent over-current damage. This device also has a dielectric withstanding voltage of 700 volts, which makes it ideal for use in high voltage applications.
In conclusion, the CMOSH-3 BK is a great single rectifier / diode that can be used in a variety of applications. It is designed to provide a low forward voltage drop and high reverse leakage to help control the switching current while also featuring a high surge current capacity and excellent reverse breakdown voltage. The device also has a wide operating temperature range and is rated to handle a peak forward current of up to 6 A. This rectifier can prove to be a great choice for electronic engineering projects that require a reliable and efficient semiconductor element.
The specific data is subject to PDF, and the above content is for reference
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