Allicdata Part #: | CMPFJ176TR-ND |
Manufacturer Part#: |
CMPFJ176 TR |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | IC JFET P-CH SOT23-3 |
More Detail: | JFET P-Channel 30V 350mW Surface Mount SOT-23 |
DataSheet: | CMPFJ176 TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10161 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 250 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Modern electronics has brought cutting-edge technology and devices to the fore, allowing for seamless device integration, high performance, and robust reliability. Among the latest developments to hit the market is the CMPFJ176TR, a junction gate field-effect transistor (JFET). Designed for high-power and high-frequency applications, this semiconductor device offers superior performance in a wide range of industrial, military, and aerospace applications.
Designed to be robust and reliable, the CMPFJ176TR JFET is a versatile device designed with high-performance in mind. It has a rugged structure, making it well-suited to take on tough industrial and aerospace tasks. It is built with high-quality materials to ensure long operational life and enhanced durability. This field-effect transistor (FET) also features excellent frequency response and low noise characteristics, making it an ideal choice for high-frequency applications.
The working principle of the CMPFJ176TR is based on the principle of independent source and drain resistance control. By adjusting the gate-source junction voltage, the current flowing through the device can be controlled. As the voltage applied to the gate changes, the current flowing through the device will also alter. This makes it possible to achieve precise control and high-performance in applications that require a high degree of accuracy and precision.
This high-performance field-effect transistor (FET) is designed to be used in conjunction with an external bias (gate-source) resistor. The resistor is connected in an RC-filter circuit, and is selected based on the current passing through the device. This bias resistor lowers the frequency of passing current, leading to reduced noise and superior performance.
The CMPFJ176TR JFET is also equipped with a high-power rating, making it suitable for applications where high current is needed. Its low-voltage drive technology allows it to deliver high power while consuming low energy levels. This reduces the overall power consumption while providing superior performance. Additionally, it is designed with low-voltage gate bias, allowing it to deliver high current without compromising on safety.
Due to its robust construction and versatile design, the CMPFJ176TR JFET is well-suited for advanced applications that require low-voltage drive, high power, and high performance. Its ability to deliver high current and excellent performance with minimal energy consumption makes it an ideal choice for a wide range of industrial, military, and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
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