Allicdata Part #: | CMS09DKR-ND |
Manufacturer Part#: |
CMS09(TE12L) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE SCHOTTKY 30V 1A MFLAT |
More Detail: | Diode Schottky 30V 1A Surface Mount M-FLAT (2.4x3.... |
DataSheet: | CMS09(TE12L) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Digi-Reel® |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 450mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | M-FLAT (2.4x3.8) |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | CMS09 |
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The CMS09 (TE12L) diode is a type of single rectifier diode designed for general purpose applications. It has better heat dissipation and is ideal for power supply designs due to its low forward voltage drop and relatively low reverse leakage current. The diode is also suitable for AC-DC and DC-DC converter applications.
The CMS09 (TE12L) diode is a general purpose, single rectifier diode which is designed for direct current (DC) operation in a wide range of applications such as power supplies, AC-DC and DC-DC converters, etc. The device has a low forward voltage drop and low reverse leakage current, making it suitable for power supply designs. The diode also has superior heat dissipation, allowing it to handle increased power ratings.
The working principle of the CMS09 (TE12L) diode is based on the concept of PN junction diode. A PN junction diode consists of two differently doped semiconductor materials, namely the P-type semiconductor and the N-type semiconductor. When the PN junction is reverse biased, the junction acts as a high resistance barrier. This results in the diode leading to very low current flow when the applied voltage exceeds its reverse breakdown voltage. When the PN junction is forward biased, the junction acts as a low resistance path, allowing the current to flow through the diode. This allows the diode to be used for rectification applications.
The CMS09 (TE12L) diode is made of high-quality PN junction material and is available in various package styles, such as the standard DO-41IC, the surface mount SMT-1, and the two-terminal SOT-223 IC. The diode also offers high peak forward current (I F(pk)) and reverse voltage (V R) ratings of 10A and 25V respectively. It has a maximum reverse recovery time of 5µs and a maximum continuous forward voltage of 1.1V. The device also features an operating temperature of -55°C to 150 °C.
The CMS09 (TE12L) diode is designed for general purpose applications. Its low forward voltage drop and low reverse leakage current make it ideal for power supply designs, while its superior heat dissipating capabilities allow it to handle increased power ratings. Additionally, the diode is suitable for use in AC-DC and DC-DC converter applications. It is available in various package styles and offers a wide range of ratings, making it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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CMS09(TE12L,Q,M) | Toshiba Semi... | 0.11 $ | 1000 | DIODE SCHOTTKY 30V 1A M-F... |
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CMS09(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A MFL... |
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