CMSZ5239B TR

CMSZ5239B is a single Zener diode with an excellent stability of both its breakdown voltage over temperature and its reverse current. It is designed for avalanche breakdown characteristics, resulting in low noise, low power dissipation, and low thermal resistance.

The CMSZ5239B TR is rated for 5.1V and 200mA. It has a maximum allowable reverse current of 200mA and a breakdown voltage of 5.1V. Its peak power dissipation is 600mW, and its thermal resistance is 0.3°C/W. Its operating temperature range is between -55°C and +150°C.

The primary application field of the CMSZ5239B TR is power regulators. It can be used to regulate the voltage output of the power supply, in order to ensure safe operation and consistent performance over the operating temperature range. It can also be used as a high speed switch or level-shifter in many electronic circuits.

The working principle of the CMSZ5239B TR is based on its avalanche breakdown characteristics. When an electrical current is applied to the diode, electrons become excited and accelerated by the electric field, resulting in the formation of an avalanche consisting of electrons and holes. This avalanche will cause a rapid increase in the current in the diode, resulting in a Zener breakdown and a very low resistance between the anode and cathode of the diode. When the current drops back below the breakdown voltage, the diode will quickly return to its normal state. This capability allows the diode to regulate the voltage output without the need for external components.

In conclusion, the CMSZ5239B TR is a single Zener diode with excellent stability in both its breakdown voltage and reverse current. It has a maximum allowable reverse current of 200mA and a breakdown voltage of 5.1V, and is adaptable to many applications such as power regulation, high speed switching and level-shifting. It is designed to use its avalanche breakdown characteristics to regulate the voltage output without the need of external components.