
Allicdata Part #: | CMZ18(TE12LQM)-ND |
Manufacturer Part#: |
CMZ18(TE12L,Q,M) |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X35 PB-F DIODE M-FLAT MOQ=3000 V |
More Detail: | Zener Diode 18V 2W ±10% Surface Mount M-FLAT (2.4x... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.12201 |
Series: | -- |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 18V |
Tolerance: | ±10% |
Power - Max: | 2W |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 13V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | M-FLAT (2.4x3.8) |
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CMZ18 (TE12L,Q,M) Application Field and Working Principle
CMZ18 (TE12L,Q,M) is classified into diode-Zener-Single, which is designed for use in electronic circuits, particularly as protection devices against transients and as voltage regulators. The CMZ18 (TE12L,Q,M) is commonly used in voltage regulation applications, such as in power supplies, Zener diode circuits, and bandgap circuits in high-voltage overshoot protection.
Application Field:
CMZ18 (TE12L,Q,M) offers a low forward voltage drop of the Zener diode, and a high current handling capability of up to 800mA (TE12L rated forward current). It has a wide range of breakdown voltages, from 2.7 to 90V. It is an appropriate choice for a variety of voltage regulation applications, including overshoot protection on AC and other sources, DC-to-DC converters, and multiple-output power supplies. It is also used in short circuit protection, overvoltage protection, and transient suppression circuits. Additionally, it is used in SCRS and TRIAC circuits.
Working Principle:
CMZ18 (TE12L,Q,M) is a junction diode whose working principle is based on a PN junction, which allows the device to act as a linear ohmic resistor in one direction and as a switch in the other direction. It is designed to produce a predetermined voltage at a given level of current. It exhibits reverse breakdown behavior, where a sudden decrease in voltage drop Vz across the diode is observed when the junction voltage rises above the Zener breakdown voltage. The current that flows when the diode is reverse-biased is called Zener current; it is independent of the applied voltage and is determined by the temperature and impurity level of the junction.
As the Zener current increases, the power dissipation across the diode increases, leading to junction heating. In order to maintain the breakdown voltage, a higher rated power dissipation of the diode is required. The PN junction technology used in CMZ18 (TE12L,Q,M) allows it to operate at higher reverse voltages and currents than other junction technologies. Additionally, the device is designed for stability, preventing the voltage from dropping or varying under normal operating conditions.
In summary, CMZ18 (TE12L,Q,M) is a type of Zener diode, classified in the diode-Zener-Single group, offering a wide range of breakdown voltages and a low forward voltage drop. It is used in short circuit protection, overvoltage protection, and transient suppression circuits, as well as AC and other sources, DC-to-DC converters, and multiple-output power supplies. It is also favored in SCRS and TRIAC circuits due to its voltage regulation stability and high current handling capability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
CMZ15(TE12L,Q,M) | Toshiba Semi... | 0.13 $ | 1000 | X35 PB-F DIODE M-FLAT MOQ... |
CMZ16(TE12L,Q,M) | Toshiba Semi... | 0.13 $ | 1000 | X35 PB-F DIODE M-FLAT MOQ... |
CMZ13(TE12L,Q,M) | Toshiba Semi... | 0.13 $ | 1000 | X35 PB-F DIODE M-FLAT MOQ... |
CMZ18(TE12L,Q,M) | Toshiba Semi... | 0.13 $ | 1000 | X35 PB-F DIODE M-FLAT MOQ... |
CMZ12(TE12L,Q,M) | Toshiba Semi... | 0.13 $ | 1000 | X35 PB-F DIODE M-FLAT MOQ... |
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