CP191V-2N2222A-CT Allicdata Electronics
Allicdata Part #:

CP191V-2N2222A-CT-ND

Manufacturer Part#:

CP191V-2N2222A-CT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN AMP/SWITCH CHIP 1=400
More Detail: Bipolar (BJT) Transistor NPN 40V 800mA 300MHz Sur...
DataSheet: CP191V-2N2222A-CT datasheetCP191V-2N2222A-CT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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Introduction: The CP191V-2N2222A-CT is a single bipolar junction transistor (BJT) designed to operate in the electronics industry. This type of BJT has been widely used in various applications due to its high performance and low operating temperature. It is generally used as a switching or amplifier device in smaller, more compact circuits.

Applications: The CP191V-2N2222A-CT is used in a wide variety of applications including amplifier circuits, switching circuits, logic circuits, power transistors, radio frequency amplifiers, and any other circuit where small size and high performance are essential. Its small size makes it ideal for use in applications where space is limited. In addition, its high performance capability and low operating temperature make it suitable for use in high current and high power circuits.

Working Principle: The CP191V-2N2222A-CT is a BJT with a common-base configuration. This means that the base-emitter junction and the collector-base junction both conduct current, allowing current to flow through the transistor. The amount of current flowing through the transistor is controlled by the amount of current flowing through the base-emitter junction. When a voltage is applied to the base-emitter junction, a small current begins to flow, allowing electrons to move from the emitter to the base, creating an electric field. This electric field, in combination with the voltage, then forces the electrons to move from the base to the collector, allowing current to travel through the transistor.The current flowing through the collector-base junction can be used to either activate a circuit (using it as a switch) or to amplify signals. By varying the input voltage at the base-emitter junction, the amount of current flowing through the collector can be controlled, allowing for smooth switching or amplification of signals. The CP191V-2N2222A-CT is an excellent choice for a variety of applications due to its high performance, low operating temperature and small size. It is a reliable, efficient and cost-effective solution for circuit design in the electronics industry.

The specific data is subject to PDF, and the above content is for reference

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