CP336V-2N5551-CT20 Allicdata Electronics
Allicdata Part #:

CP336V-2N5551-CT20-ND

Manufacturer Part#:

CP336V-2N5551-CT20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 1=20PCS
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 300MHz Su...
DataSheet: CP336V-2N5551-CT20 datasheetCP336V-2N5551-CT20 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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CP336V-2N5551-CT20 Application Field and Working Principle

A CP336V-2N5551-CT20 transistor is a type of bipolar junction transistor (BJT). BJTs, such as the CP336V-2N5551-CT20, are three-terminal active semiconductor devices consisting of three PN-junction regions connected to three metallic contacts called the Base, Collector, and Emitter. BJTs can be used for a variety of applications, including amplification, signal switching, signal current, and voltage conversion.

Overview

The CP336V-2N5551-CT20 is a high-performance, low-noise, larges-scale integrated NPN silicon transistor designed for use in high-frequency switching applications. It is a single element device, meaning there is only one base, collector, and emitter, and it is specifically intended for device operation between the ranges of -25°C to +85°C. It is especially suited for audio power amplifier applications, and is an ideal choice for use in high-frequency switches, modulators, data converters, active filter circuits, and RF amplifier circuits.

Applications

At present, this type of CP336V-2N5551-CT20 transistor has extensive applications in many fields, including:

  • Amplifiers: This power amplifier device can be used to amplify digital or low-frequency signals, such as audio signals.
  • Switching: This transistor is ideal for switching applications, such as telecommunication networks, automotive electronics, and digital broadcasting systems.
  • Signal Conversion: This device can also be used in devices that require the conversion of analog signals to digital signals and vice versa, such as modulators and data converters.
  • RF amplifiers: CP336V-2N5551-CT20 transistors can also be used in RF amplifier circuits to enhance the noise immunity of the system.

Characteristics

The CP336V-2N5551-CT20 transistor has excellent electrical characteristics. It has a current gain of 10-20, a wide operating voltage range (25V-100V), a wide operating frequency range (70 Mhz - 300 Mhz), high-speed switching and modulation characteristics, thermal resistance of 150K/W, and a low noise figure of 0.3dB. In addition, the device is RoHS compliant and is packaged in a tiny TO-220 package.

Working Principle

The working principle of the CP336V-2N5551-CT20 transistor is that, when the emitter-base PN junction is forward biased, free electrons injected from the emitter into the base region create a conducting path between the emitter and the collector terminals. This is known as the "active region" of the transistor. When a small change in voltage is applied at the base terminal of the device (known as the bias voltage), a much larger change in the current flowing between the collector and the emitter is observed. This resulting current flow between the collector and the emitter is known as the collector current and is controlled by the base current applied at the base terminal.

The current amplification factor, also known as the gain of the transistor, is given by the ratio of the collector current to the base current and is usually represented by the symbol hFE. The higher the current amplification factor, the higher the gain of the transistor. Therefore, the high performance, low-noise, large-scale integrated CP336V-2N5551-CT20 transistor is suitable for application in high-frequency switching and modulation applications, as well as power amplifier applications.

Conclusion

The CP336V-2N5551-CT20 is a single element BJT transistor that has excellent electrical characteristics and is specifically designed for use in high-frequency switching and modulation applications, as well as power amplifier applications. It has a very good current gain, wide operating voltage range, and high-speed switching characteristics. In addition, it is RoHS compliant and is packaged in a tiny TO-220 package.

Therefore, this CP336V-2N5551-CT20 transistor is an ideal choice for applications requiring amplification, signal switching, signal current and voltage conversion. As a result, it is widely used for various applications in power electronics, automotive electronics, industrial automation, and communication systems.

The specific data is subject to PDF, and the above content is for reference

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