Allicdata Part #: | CP547-MJ11013-WS-ND |
Manufacturer Part#: |
CP547-MJ11013-WS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP DARL 30A 90V DIE |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | CP547-MJ11013-WS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Introduction
CP547-MJ11013-WS is a type of single bipolar transistor. It is manufactured in an aluminum-lead alloy case and is designed for use in both industrial and consumer applications. The transistor is suitable for use in a variety of circuits and applications requiring high switching speed and efficient power transfer.
Application Field
CP547-MJ11013-WS is suitable for a wide range of applications, including high-speed switching, audio and video amplifiers, active filters, communication systems, gate drivers and other power management circuits. It is ideal for applications that require a reliable and high speed switching performance.
The CP547-MJ11013-WS is especially suitable for use in low voltage and home appliances applications, as it offers low switching noise and good thermal performance. It is also suitable for use in industrial applications, such as in motor controllers, DC-DC converters, and power amplifiers.
Working Principle
CP547-MJ11013-WS is a NPN transistor, and as such it has three PN junctions: collector to base, base to emitter, and collector to emitter. The collector to base junction is the most important one as it allows control of the current flow from the collector to the emitter. When sufficient base current is applied, the collector to emitter current is amplified according to the transistor\'s gain.
The base current is controlled by the voltage applied between the base and the emitter. When the base to emitter voltage (Vbe) is increased, the collector to emitter current also increases, and vice versa. The transistor can also be operated in the reverse direction, in which case the collector to emitter current is decreased as the base to emitter voltage is increased.
In operation, the transistor acts like a switch that can be turned on or off, depending on the applied voltage. When it is off, the collector to emitter current is zero, and the transistor is said to be in the cutoff region. When it is on, the collector to emitter current is increased, and the transistor is said to be in the saturation region.
The gain of a transistor is commonly referred to as its current gain (hFE), and it is defined as the ratio of the collector current to the base current. A transistor with a higher current gain has a higher amplification, and can handle higher currents. The CP547-MJ11013-WS has a maximum collector current of 0.5A, with a minimum current gain of 40 at a collector to emitter voltage of 5V.
Conclusion
CP547-MJ11013-WS is a single bipolar transistor ideal for applications requiring high switching speed and efficiency. It is suitable for a wide range of applications, such as in audio and video amplifiers, active filters, motor controllers, gate drivers, and power management circuits. The transistor operates based on the three PN junctions and the base to emitter voltage applied, allowing current to flow from the collector to the emitter when it is turned on, and acts as a switch when it is off. The transistor has a maximum collector current of 0.5A and a minimum current gain of 40 at a collector to emitter voltage of 5V.
The specific data is subject to PDF, and the above content is for reference
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